3-XFDFN Related Product
Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
---|---|---|---|---|---|---|
DMN2400UFB-7 | Compact design for space-constrained electronic devices | DIODES | Active | 3~7 Days | 7,428 | |
PMBT3906MB | 200mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, 1 X 0.60 MM, 0.37 MM HEIGHT, PLASTIC, LEADLESS, ULTRA SMALL, DFN1006B-3 | NXP | 3~7 Days | 7,600 | ||
PDTA124XMB,315 | Bipolar Transistors - Pre-Biased PDTA124XMB/SOT883B/XQFN3 | Nexperia USA Inc. | ACTIVE | 3~7 Days | 6,231 | |
PDTA124TMB,315 | Bipolar Transistors - Pre-Biased PDTA124TMB/SOT883B/XQFN3 | Nexperia USA Inc. | ACTIVE | 3~7 Days | 9,740 | |
PDTA143TMB,315 | Bipolar Transistors - Pre-Biased PDTA143TMB/SOT883B/XQFN3 | Nexperia USA Inc. | ACTIVE | 3~7 Days | 8,404 | |
PDTA124EMB,315 | Bipolar Transistors - Pre-Biased PDTA124EMB/SOT883B/XQFN3 | Nexperia USA Inc. | ACTIVE | 3~7 Days | 8,727 | |
SESD0402Q2UG-0020-090 | Voltage clamp diode | Littelfuse Inc. | ACTIVE | 3~7 Days | 6,369 | |
PDTC114TMB,315 | Bipolar Transistors - Pre-Biased PDTC114TMB/SOT883B/XQFN3 | Nexperia USA Inc. | ACTIVE | 3~7 Days | 9,920 | |
CSD25483F4 | -20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 245 mOhm, gate ESD protection 3-PICOSTAR -55 to 150 | Texas Instruments | ACTIVE | 3~7 Days | 6,873 | |
CSD23382F4T | Trans MOSFET P-CH 12V 3.5A 3-Pin PicoStar T/R | Texas Instruments | ACTIVE | 3~7 Days | 5,999 | |
CSD15380F3T | MOSFET 20-V N-Ch FemtoFET | Texas Instruments | ACTIVE | 3~7 Days | 9,538 | |
CSD25485F5 | -20-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 42 mOhm, gate ESD protection 3-PICOSTAR -55 to 150 | Texas Instruments | ACTIVE | 3~7 Days | 5,034 | |
SZNUP2124MXWTBG | ESD Suppressors / TVS Diodes 28V CAN-FD ESD PROTECTION IN WDFNW3 1X1MM | Onsemi | ACTIVE | 3~7 Days | 6,939 | |
TF412ST5G | Trans JFET N-CH 30V 10mA 3-Pin SOT-883 T/R | Onsemi | ACTIVE | 3~7 Days | 9,971 | |
NTNS3164NZT5G | Trans MOSFET N-CH 20V 0.361A 3-Pin XDFN T/R | Onsemi | ACTIVE | 3~7 Days | 6,397 | |
SZNUP2124MXWTAG | ESD Suppressors / TVS Diodes 28V CAN-FD ESD PROTECTION IN WDFNW3 1X1MM | Onsemi | ACTIVE | 3~7 Days | 5,591 | |
SDM02M30CLP3-7B | All-purpose Silicon Rectifier for different needs | Diodes Incorporated | ACTIVE | 3~7 Days | 5,023 | |
RA1C030LDT5CL | Product RA1C030LDT5CL | Rohm Semiconductor | ACTIVE | 3~7 Days | 8,121 | |
DMN26D0UFB4-7B | Product Identifier: DMN26D0UFB4-7B is a MOSFET with a BVDSS range of 8V to 24V | Diodes Incorporated | OBSOLETE | 3~7 Days | 7,112 | |
BC846BLP4-7B | NPN Bipolar Junction Transistor for General Purpose Applications with 65V Voltage Rating and 0.1A Current Rating | Diodes Incorporated | ACTIVE | 3~7 Days | 8,432 | |
RV3C002UNT2CL | CH Transistor MOSFET 20V 0.15A 3-pin T/R VML | Rohm Semiconductor | ACTIVE | 3~7 Days | 7,920 | |
D3V3L2B3LP10-7 | ESD Suppressor TVS Bi-Dir 3.3V 3-Pin X2-DFN T/R | Diodes Incorporated | ACTIVE | 3~7 Days | 7,661 | |
RV3CA01ZPT2CL | Portable device MOSFET RV3CA01ZP in miniature 0604 size | Rohm Semiconductor | ACTIVE | 3~7 Days | 6,787 | |
DMN3110LCP3-7 | MOSFET with a breakdown voltage range of 25V to 30V | Diodes Incorporated | OBSOLETE | 3~7 Days | 7,962 | |
CSD25481F4T | PicoStar packaged P-channel MOSFET with 3 pins, rated for 20V and 2.5A | Texas Instruments | ACTIVE | 3~7 Days | 6,682 | |
CSD17382F4T | Product CSD17382F4T is a 30V 2.3A MOSFET with a low on-resistance of 64mΩ at 500mA | Texas Instruments | ACTIVE | 3~7 Days | 9,303 | |
MMBT2222ALP4-7B | Trans GP BJT NPN 40V 0.6A 1000mW 3-Pin X2-DFN T/R | Diodes Incorporated | ACTIVE | 3~7 Days | 8,859 | |
DMN2300UFB4-7B | Trans MOSFET N-CH 20V 1.3A 3-Pin X2-DFN T/R | Diodes Incorporated | ACTIVE | 3~7 Days | 5,700 | |
DMG3415UFY4-7 | Trans MOSFET P-CH 16V 2.5A 3-Pin DFN T/R | Diodes Incorporated | OBSOLETE | 3~7 Days | 7,886 | |
2N7002BKMB,315 | MOSFET N-CH 60V 450MA DFN1006B-3 | Nexperia USA Inc. | OBSOLETE | 3~7 Days | 5,958 | |
SDM1L20DCP3-7 | Diode Schottky 20V 1A T/R | Diodes Incorporated | ACTIVE | 3~7 Days | 9,048 | |
PDTA115TMB,315 | Bipolar Transistors - Pre-Biased PDTA115TMB/SOT883B/XQFN3 | Nexperia USA Inc. | ACTIVE | 3~7 Days | 6,978 | |
DMN2451UFB4Q-7R | Trans MOSFET N-CH 20V 1.3A Automotive AEC-Q101 T/R | Diodes Incorporated | ACTIVE | 3~7 Days | 6,504 | |
PDTA113EMB,315 | Bipolar Transistors - Pre-Biased PDTA113EMB/SOT883B/XQFN3 | Nexperia USA Inc. | ACTIVE | 3~7 Days | 8,065 | |
DMP2078LCA3-7 | Trans MOSFET P-CH 20V 3.4A 3-Pin X4-DSN T/R | Diodes Incorporated | ACTIVE | 3~7 Days | 8,572 | |
DMN2992UFB4Q-7B | MOSFET BVDSS: 8V~24V X2-DFN1006- | Diodes Incorporated | ACTIVE | 3~7 Days | 7,478 | |
DMN2992UFB4-7B | MOSFET BVDSS: 8V~24V X2-DFN1006- | Diodes Incorporated | ACTIVE | 3~7 Days | 8,546 | |
DMP2077UCA3-7 | P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated | ACTIVE | 3~7 Days | 7,623 | |
CSD23381F4T | Trans MOSFET P-CH 12V 2.3A 3-Pin PicoStar T/R | Texas Instruments | ACTIVE | 3~7 Days | 6,908 | |
CSD17484F4 | 30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 128 mOhm, gate ESD protection 3-PICOSTAR -55 to 150 | Texas Instruments | ACTIVE | 3~7 Days | 5,815 |
Additional Package/Case