Congratulations On Your Successful Submission
Submission Failure
D2PAK Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| SRS2020 | Schottky Rectifier SRS2020 20A 20V Tape and Reel | TSC | NRND | 3~7 Days | 5,555 | |
| SFS1005G | 3-Pin(2+Tab) D2PAK diode switching 300V 10A | TSC | 3~7 Days | 4,657 | ||
| IDK12G65C5 | Schottky Diodes and Rectifiers SIC Diodes | INFINEON | 3~7 Days | 4,413 | ||
| BUK7105-40AIE | An automotive-grade N-channel MOSFET capable of handling up to 40 volts and 155 amps of current, meeting AEC-Q101 specifications | NXP | ACTIVE | 3~7 Days | 5,412 | |
| IRF100S201 | IRF100S201 is a MOSFET device boasting a voltage rating of 100V and a formidable current handling capability of 192A, with a low on-resistance of 4 | INFINEON | 3~7 Days | 7,489 | ||
| IRF5210STRRPBF | Lead Free 0.06ohm 1-Element | INFINEON | 3~7 Days | 7,692 | ||
| STB10N95K5 | MOSFET N-channel 950 V, 0.65 Ohm typ 8 A MDmesh K5 Power MOSFET | STMicroelectronics | 3~7 Days | 7,847 | ||
| STB28NM50N | High-power N-channel transistor | STMicroelectronics | 3~7 Days | 7,972 | ||
| T835-600G | T835-600G product details: 35mA 35mA 600V 1 bidirectional controlled silicon D2PAK TRIACs ROHS | STMicroelectronics | 3~7 Days | 4,576 | ||
| BUB323Z | BUB323Z NPN Darlington Bipolar Power Transistor | Onsemi | 3~7 Days | 6,672 | ||
| HFA15TB60S | Diode with 600V Voltage Rating | Vishay | 3~7 Days | 4,670 | ||
| 15ETH06S | Rectifiers 15ETH06S, recommended alternative 78-VS-15ETH06S-M3" | Vishay | Active | 3~7 Days | 3,701 | |
| IRF1010NS | 263AB, PLASTIC, D2PAK-3 Power Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 75A I(D), 55V, 0.011ohm | INFINEON | 3~7 Days | 3,488 | ||
| IRFS3207 | A robust N-Channel power FET, rated for 75A current and 75V voltage, offering a low on-resistance of 0 | INFINEON | Active | 3~7 Days | 4,525 | |
| STB20NM50 | 20A N-Channel Silicon Power MOSFET with 500V Voltage Rating and 0.25ohm Resistance in TO-263AB Package | STMicroelectronics | 3~7 Days | 7,494 | ||
| STB80NF03L-04 | TO-262AA Package 80A, 30V N-Channel Si Power MOSFET | STMicroelectronics | 3~7 Days | 5,688 | ||
| STPS2045C | STPS2045C is a Schottky barrier rectifier diode in TO-220 package with 20A current rating. | STMicroelectronics | 3~7 Days | 5,924 | ||
| STD65N3LLH5 | Standard MOSFET with 3-pin configuration | STMicroelectronics | Obsolete | 3~7 Days | 5,263 | |
| FQB34P10TM_F085 | -100V, -33.5A P-channel MOSFET identified by code FQB34P10TM-F085 | Fairchild | 3~7 Days | 4,963 | ||
| BUK714R1-40BT | Power Field-Effect Transistor | NXP | 3~7 Days | 4,369 | ||
| BUB941ZT | NPN power Darlington ignition coil driver for high voltage applications | STMicroelectronics | 3~7 Days | 5,308 | ||
| NVBG022N120M3S | Silicon Carbide MOSFET with a 1200 volt rating and 22 milliohm resistance | Onsemi | 3~7 Days | 3,182 | ||
| NVB072N65S3 | NVB072N65S3 - A cutting-edge MOSFET SUPERFET3 in a 650V D2PAK package | Onsemi | Active | 3~7 Days | 3,686 | |
| NVBG060N090SC1 | N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor | Onsemi | Active | 3~7 Days | 5,190 | |
| NVB082N65S3F | With a power dissipation rating of 313W at 5V and 1mA, this MOSFET delivers reliable performance | Onsemi | Active | 3~7 Days | 5,819 | |
| STPS20L40 | STPS20L40 is a Schottky diode module for high power density applications. | STMicroelectronics | 3~7 Days | 6,585 | ||
| IRL630S | MOSFET Transistor | IR | Discontinued | 3~7 Days | 7,502 | |
| STB36NF06L | The STB36NF06L MOSFET is capable of handling 60V of voltage and 30A of current in a D2PAK package | STMicroelectronics | 3~7 Days | 3,169 | ||
| L7915C | L7915C is a three-terminal negative voltage regulator capable of providing an output voltage of -15V at up to 1.5A. | STMicroelectronics | 3~7 Days | 4,941 | ||
| NVB190N65S3F | 190 milliohms, 650 volts, 20 amps, N-channel D2PAK | Onsemi | Active | 3~7 Days | 4,795 | |
| STTH812 | STTH812 is a 12A ultrafast silicon rectifier diode for high-frequency applications. | STMicroelectronics | 3~7 Days | 4,728 | ||
| STTH30R04 | STTH30R04 is a fast recovery diode in a DPAK package, designed for high frequency applications. | STMicroelectronics | 3~7 Days | 5,489 | ||
| STTH1512 | STTH1512 is a high efficiency ultrafast diode for high frequency power supplies. | STMicroelectronics | 3~7 Days | 7,332 | ||
| STTH810 | STTH810 is a high voltage power Schottky diode ideal for high frequency switching applications. | STMicroelectronics | 3~7 Days | 3,836 | ||
| STTH806 | STTH806 is a high voltage Schottky diode for fast recovery with low forward voltage drop. | STMicroelectronics | 3~7 Days | 4,471 | ||
| STTA806 | STTA806 is a high-speed rectifier designed for automotive applications, offering low forward voltage drop and high surge current capability. | STMicroelectronics | 3~7 Days | 7,239 | ||
| STTH30L06 | STTH30L06 is a high voltage ultrafast diode rectifier for use in switching power supplies and inverters. | STMicroelectronics | 3~7 Days | 3,815 | ||
| STTH1602C | STTH1602C is a high-efficiency, ultrafast diode suitable for high-frequency applications. | STMicroelectronics | 3~7 Days | 5,887 | ||
| STB12NM50N | The STB12NM50N transistor is designed for high voltage applications | STMicroelectronics | 3~7 Days | 6,281 | ||
| STPS3045C | STPS3045C is a dual Schottky rectifier designed for high-frequency applications. | STMicroelectronics | 3~7 Days | 7,129 |
Additional Package/Case