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IGBT Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| 7MBR50SA060 | IGBT PIM Module for Three-Phase Dual Bridge Applications rated at 50A and 600V from the S Series | Fuji Electric Co Ltd | 3~7 Days | 5,172 | ||
| 2MBI200VH-120-50 | IGBT module with dual diode, 200A and 1200V, part of the V series | Fuji Electric | 3~7 Days | 4,756 | ||
| MG75Q2YS50 | TRANSISTOR MG75Q2YS50, N-CHANNEL IGBT, Insulated Gate BIP Transistor, 100A, 1200V | Toshiba America Electronic Components | 3~7 Days | 5,678 | ||
| FS400R07A3E3 | FS400R07A3E3 Insulated Gate Bipolar Transistor | INFINEON | 3~7 Days | 7,605 | ||
| VS-VSKC91/04 | Vishay VS-VSKC91/04, Dual Diode Module, Common Cathode, 400V 100A, 3-Pin TO-240AA | VISHAY | ACTIVE | 3~7 Days | 3,728 | |
| FS820R08A6P2LB | Miniature Signal FET | Infineon | 3~7 Days | 4,173 | ||
| FF450R33T3E3 | Insulated gate bipolar transistor | Infineon | 3~7 Days | 3,069 | ||
| MG50Q2YS50 | 8A current rating, 1200V voltage rating, and n-channel type | TOSHIBA | 3~7 Days | 3,470 | ||
| 2MBI150VA-060-50 | V series IGBT module with dual diode, 150A current and 600V voltage | FUJITSU | 3~7 Days | 5,341 | ||
| 2MBI800XNE120-50 | 2MBI800XNE120-50 is a high power IGBT module for industrial applications. | FUJITSU | 3~7 Days | 5,949 | ||
| C200H-DA001 | Product description: D/A unit, 1-5V, 4-20mA/0-10V | Omron Automation And Safety | Discontinued | 3~7 Days | 4,926 | |
| SKM300GAL063D | N-channel Insulated Gate Bipolar Transistor (IGBT) with a maximum current rating of 400A and voltage rating of 600V | SEMIKRON | 3~7 Days | 5,911 | ||
| 2MBI150U2A-060-50 | ; Operating Temperature Max:150°C; Igbt Termination:Stud; Transistor Mounting:Panel Rohs Compliant: Yes |Fuji Electric 2MBI150U2A-060-50 | FUJITSU | 3~7 Days | 5,174 | ||
| 6MBI450U-120-02 | FUJITSU | 3~7 Days | 4,457 | |||
| 2SD300C17A0 | IGBT Driver Gate Drivers 2SD300C17A1 | Power Integrations | Obsolete | 3~7 Days | 5,955 |
Additional Package/Case