SOT-163 Related Product
Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
---|---|---|---|---|---|---|
SC802-04-TE12RA | Single-Element Schottky Diode: A diode configuration incorporating Schottky characteristics | FUJITSU | 3~7 Days | 5,083 | ||
MTM763200LBF | Transistor MOSFET N/P-Channel Silicon 20V 1.9A/1.2A 6-Pin WSMini6-F1-B Tape and Reel | PANASONIC | Obsolete | 3~7 Days | 5,441 | |
IRLMS1902 | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 | INFINEON | Restricted Availability | 3~7 Days | 3,675 | |
DMP2035UVT | P-Channel MOSFET with Enhancement Mode | DIODES | 3~7 Days | 4,431 | ||
TPC6102 | Silicon P-channel transistor with 4500 mA current and 30 V voltage rating | TOSHIBA | 3~7 Days | 6,198 | ||
RN4602 | 2-channel small signal transistor with 100 mA, 50 V, NPN and PNP, Si, 6 pin, BIP general purpose | TOSHIBA | 3~7 Days | 5,110 | ||
RRQ045P03 | P03 RRQ045P03 product | ROHM | 3~7 Days | 6,072 | ||
BCM856DS | PNP Silicon Transistor with 2-Element Configuration | NXP | 3~7 Days | 4,514 | ||
NCP1729 | ANA charge pump | NXP | 3~7 Days | 6,382 | ||
NUP4304MR6 | ESD protection diode array with low capacitance | Onsemi | 3~7 Days | 5,201 | ||
NVC6S5A354PLZ | 60V Voltage Rating | Onsemi | 3~7 Days | 4,454 | ||
PMN50XP | TSOP-6 MOSFET General Purpose Power | NXP | OBSOLETE | 3~7 Days | 5,738 | |
RTQ035N03 | RTQ035N03 is a power MOSFET chip with 35A and 30V ratings for high-power applications. | ROHM | 3~7 Days | 5,877 | ||
RSQ020N03 | Product RSQ020N03: a compact N-channel MOSFET tailored for small-scale signal tasks, supporting voltages up to 30V and currents up to 2A | ROHM | 3~7 Days | 5,995 | ||
RSQ045N03 | RSQ045N03 is a high voltage power MOSFET chip for switching applications. | ROHM | 3~7 Days | 5,205 | ||
PA1900 | Terminal Cable Fuse Spanner | NEC | 3~7 Days | 4,593 | ||
PA1911 | Knife cable set with pouch | NEC | 3~7 Days | 5,364 | ||
NUP4302MR6 | NUP4302MR6 is a low power microcontroller with integrated BLE radio for IoT applications. | Onsemi | 3~7 Days | 3,001 | ||
RRQ030P03 | RRQ030P03 chip is a power management IC for mobile devices, with high efficiency and low power consumption. | ROHM | 3~7 Days | 5,722 | ||
SI3493BDV | SI3493BDV chip is a dual N-channel enhancement-mode MOSFET in a small TSSOP-8 package. | VISHAY | 3~7 Days | 5,219 | ||
FDC6305 | MOSFET 2N-CH 20V 2.7A SSOT6 | FAIRCHILD | 3~7 Days | 3,551 | ||
FDC6301 | Dual N-Channel , Digital FET | FAIRCHILD | 3~7 Days | 4,090 | ||
CPH6324 | Power Field-Effect Transistor, 2A I(D), 60V, 0.56ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, CPH6, 6 PIN | SANYO | 3~7 Days | 5,521 | ||
CPH6424-TL-E | CPH6424 - N-CHANNEL SILICON MOSF | SANYO | 3~7 Days | 3,058 | ||
BF485PN | Small Signal Bipolar Transistor, 0.1A I(C), NPN and PNP, | PHILIPS | 3~7 Days | 4,147 | ||
BZA420A | Trans Voltage Suppressor Diode, 20V V(RWM), Unidirectional, | NXP | 3~7 Days | 5,988 | ||
SBE601 | Rectifier Diode, Schottky, 1 Phase, 2 Element, 2A, 30V V(RRM), Silicon, CPH6, 6 PIN | SANYO | 3~7 Days | 5,463 | ||
FDC6420 | 20V N & P-Channel PowerTrench MOSFETs | FAIRCHILD | 3~7 Days | 3,779 | ||
CPH6316 | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,3A I(D),TSOP | SANYO | 3~7 Days | 4,724 | ||
SI3456BDV | MOSFET N-CH 30V 4.5A 6TSOP | VISHAY | 3~7 Days | 3,689 | ||
SI1539DL | Transistor | VISHAY | 3~7 Days | 7,797 | ||
UPC2712T | Wide Band Low Power Amplifier, 2600MHz Max, | NEC | 3~7 Days | 5,897 | ||
TPS3106K33DBV | IC SUPERVISOR 1 CHANNEL SOT23-6 | Texas Instruments | 3~7 Days | 6,011 | ||
SUD19N20 | MOSFET N-CH 200V 19A TO252 | VISHAY | 3~7 Days | 6,972 | ||
PA1913 | Cable Strip Tool for CAT-5, CAT-5e & CAT-6 Cables | NEC | 3~7 Days | 4,831 | ||
IMD16A | Small Signal Bipolar Transistor, 0.5A I(C), 2-Element, NPN and PNP, Silicon | ROHM | 3~7 Days | 7,455 |
Additional Package/Case