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SOT-363 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| FDG332PZ | 2.6mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SC-70, 6 PIN | Onsemi | 3~7 Days | 7,823 | ||
| MCH6664-TL-W | MCH6664-TL-W is a P Channel MOSFET with a maximum voltage rating of 30V, capable of handling currents up to 1 | Onsemi | Active | 3~7 Days | 7,665 | |
| NUP2202W1 | NUP2202W1 chip is a highly integrated power management IC for low-power IoT applications. | Onsemi | 3~7 Days | 4,900 | ||
| MAAL-010570 | IC AMP GPS 100MHZ-3.5GHZ SC70 | M/A-COM | 3~7 Days | 3,579 | ||
| DMN62D0UDW | Intended to minimize resistance when on | DIODES | 3~7 Days | 6,143 | ||
| UPG2009TB | UPG2009TB description of RF Switch ICs L S Band SPDT Switch | Renesas | 3~7 Days | 5,341 | ||
| SI1555DL | Advanced signal isolation for reliable system integration: The SIDL is a quad-channel digital isolator that enables high-speed | Vishay | 3~7 Days | 7,435 | ||
| PESD5V0L5UY,115 | ESD Suppressor Diode TVS Uni-Dir 5V 12Vc Automotive AEC-Q101 6-Pin TSSOP T/R | NEXPERIA | ACTIVE | 3~7 Days | 6,758 | |
| BSS84AKS,115 | Transistor MOSFET Array Dual P-CH 50V 160mA 6-Pin TSSOP T/R | NEXPERIA | Active | 3~7 Days | 5,139 | |
| BAV70S,115 | Diode Switching 100V 0.25A 6-Pin TSSOP T/R | NEXPERIA | ACTIVE | 3~7 Days | 5,430 | |
| BAT754L,115 | High efficiency diode for signal rectification in miniaturized designs | NEXPERIA | ACTIVE | 3~7 Days | 4,689 | |
| BAV99S,115 | 2x Series Pair, 100V 200mA, 4 ns | NEXPERIA | ACTIVE | 3~7 Days | 5,586 | |
| BCM847BS,115 | Trans GP BJT NPN 45V 0.1A 300mW Automotive AEC-Q101 6-Pin TSSOP T/R | NEXPERIA | ACTIVE | 3~7 Days | 3,506 | |
| BCM857BS,115 | 45V Bipolar Transistors - BJT ROHS | NEXPERIA | Active | 3~7 Days | 7,190 | |
| BC846S,115 | Trans GP BJT NPN 65V 0.1A 300mW 6-Pin TSSOP T/R | NEXPERIA | ACTIVE | 3~7 Days | 7,787 | |
| ABA-52563 | Amplifier with broad frequency coverage and minimal power consumption | Avago Technologies | 3~7 Days | 5,112 | ||
| RN1907 | 2-3L1A Small Signal Transistor, NPN, Si, 100 mA, 50 V, 2 CHANNEL, SMV, 5 PIN, BIP | Toshiba | 3~7 Days | 7,941 | ||
| RN1904 | Identified by code RN1904, this transistor is characterized by its small form factor and versatile performance | Toshiba | 3~7 Days | 7,314 | ||
| NJG1608KB2 | For OEMs and CMs exclusively | New Japan Radio Co Ltd | 3~7 Days | 3,632 | ||
| UPC2746TB | Broadband RF Amplifier | Renesas Electronics | 3~7 Days | 3,454 | ||
| SGC2363Z | Bipolar technology used | RFMD | OBSOLETE | 3~7 Days | 3,157 | |
| PMGD280UN,115 | SC-88 6-Pin Package | NEXPERIA | NRND | 3~7 Days | 7,777 | |
| NX3L1G3157GW | High-performance switching solution | NXP | ACTIVE | 3~7 Days | 7,932 | |
| MMDT2222A-7-F | NPN Bipolar Junction Transistor with 40V Voltage Rating and 0.6A Current Rating, SOT-363 Package | DIODES | Active | 3~7 Days | 7,096 | |
| MMBD4148TW-7-F | Diode Switching 75V 0.3A 6-Pin SOT-363 T/R Tape and Reel | DIODES | Active | 3~7 Days | 5,198 | |
| MMBD4448DW-TP | 250mA 75V Diodes | MCC | 3~7 Days | 3,721 | ||
| MMDT3904-7 | Bipolar transistors with a voltage rating of 40V and power rating of 200mW | DIODES | Discontinued | 3~7 Days | 3,821 | |
| MMDT5551-7-F | SOT363-6 packaged transistor with dual NPN configuration capable of handling up to 160V and 0.2A | DIODES | Active | 3~7 Days | 6,536 | |
| MMDT2227-7-F | SOT-363 Package NPN/PNP Transistor with 40V Voltage Rating, 0.6A Current Rating, and 200mW Power Dissipation | DIODES | Active | 3~7 Days | 5,802 | |
| MMDT2907A-7-F | NPN Transistors | DIODES | Active | 3~7 Days | 7,016 | |
| MGA-68563-BLKG | Boost your RF performance with the cutting-edge technology of the GaAs Dvr-Amp RF Amplifier RFIC." | BROADCOM | Active | 3~7 Days | 4,487 | |
| BZX84C5V1TS-7-F | Rated for power dissipation of 200mW | DIODES | 3~7 Days | 7,031 | ||
| BAS40TW-7-F | BAS40TW-7-F product code | DIODES | Active | 3~7 Days | 6,635 | |
| BCR08PN | Transistor for signal amplification | INFINEON | 3~7 Days | 3,703 | ||
| BCR116S | BCR116S is a type of pre-biased bipolar transistor | INFINEON | NRND | 3~7 Days | 4,173 | |
| NX3L1T3157GW | Single-channel switch with one pole and double throw capability | NXP | OBSOLETE | 3~7 Days | 5,508 | |
| DMG1016UDW | Complementary Enhancement MOSFET Pair" | DIODES | 3~7 Days | 5,939 | ||
| BSD316SN | Small signal transistor BSD316SN | INFINEON | NRND | 3~7 Days | 6,847 | |
| BSD314SPE | Green Plastic Package-6 | INFINEON | NRND | 3~7 Days | 7,471 | |
| BSD235C | Compact, power-efficient design for seamless IoT connections | INFINEON | NRND | 3~7 Days | 4,920 |
Additional Package/Case