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SOT-563-6 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| SI1024X-T1-E3 | Preferred alternative MOSFET for SI1024X-T1-E3 | VISHAY SILICONIX | 3~7 Days | 7,897 | ||
| DCX144EH-7 | 150MW Bipolar Transistors with Pre-Biasing and 47K Resistance | DIODES | Active | 3~7 Days | 4,213 | |
| DMP2004VK-7 | DMP2004VK-7 is a Dual P-channel MOSFET Transistor by Diodes Inc | DIODES | Active | 3~7 Days | 5,522 | |
| DMN32D2LV-7 | Dual N-Channel MOSFET transistor | DIODES | Active | 3~7 Days | 6,572 | |
| BSS84V-7 | BSS84V-7 Dual P-Channel MOSFET | Diodes Incorporated | 3~7 Days | 4,622 | ||
| NST3904DXV6T1G | NPN Bipolar Junction Transistor 40V 0.2A 500mW | Onsemi | Active | 3~7 Days | 5,713 | |
| NTZS3151PT1G | MOSFET featuring a P-Channel configuration, capable of handling up to -950mA current at -20V | Onsemi | Active | 3~7 Days | 7,161 | |
| MP2151GQFU-P | Compact power supply for portable devices and IoT applications, featuring a small form factor and high efficienc | Monolithic Power Systems (Mps) | 3~7 Days | 2,834 | ||
| EMZ1FHAT2R | Small Signal Bipolar Transistor EMZ1FHAT2R | ROHM Semiconductor | NRND | 3~7 Days | 5,425 | |
| D1213A-04V-7 | Green Plastic Package-6 containing Transient Voltage Suppressor Diode in Unidirectional Configuration | Diodes Incorporated | ACTIVE | 3~7 Days | 6,020 | |
| DMG1029SV-7 | Product DMG1029SV-7 is a MOSFET with N-type polarity, rated for 60 volts, and packaged in SOT-563 | Diodes Incorporated | ACTIVE | 3~7 Days | 9,622 | |
| DMN5L06VK-7 | Description of item: DMN5L06VK-7 | Diodes Incorporated | OBSOLETE | 3~7 Days | 9,674 | |
| DMC2400UV-7 | SOT-563 Transistor MOSFET with N/P-Channel, 20V voltage rating, and 1.030A/0.7A current rating | Diodes Incorporated | ACTIVE | 3~7 Days | 7,256 | |
| BC847BV | Compact SOT-package design provides reduced size and increased reliability in demanding electronic systems | Nexperia | 3~7 Days | 7,954 | ||
| DMG1023UV-7 | MOSFET MOSFET P-CHANNEL | Diodes Incorporated | Active | 3~7 Days | 9,410 | |
| DF6D6UFE,L3F | TVS diode designed to provide ESD protection by clamping or diverting excess voltage away from sensitive circuits | Toshiba | 3~7 Days | 5,578 | ||
| 74LVC1T45Z6-7 | Translation - Voltage Levels Sgl Bit 1 Gate 5.5V 24mA 16uA 3 State | Diodes Incorporated | ACTIVE | 3~7 Days | 6,623 | |
| DMN5L06VK | MOSFET | diodes incorporated | 3~7 Days | 8,729 |
Additional Package/Case