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SOT23 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| FMMT620 | Provides reliable performance in harsh environments and is widely used in industrial automation and control system | diodes incorporated | 3~7 Days | 7,100 | ||
| FMMT591A | SOT-23 Bipolar Transistors - BJT ROHS | Diodes Incorporated | ACTIVE | 3~7 Days | 6,542 | |
| DMN3404L | Product DMN3404L: A MOSFET with N-channel enhancement mode | Diodes Incorporated | 3~7 Days | 6,167 | ||
| DMN3300U | Description of DMN3300U: N-Channel Enhancement Mode MOSFET | diodes incorporated | Active | 3~7 Days | 6,046 | |
| DMG263010R | Pre-Configured Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Configured (Dual) 50V 100mA 300mW Surface Mount Mini5-G3-B | Panasonic - Bsg | 3~7 Days | 5,777 | ||
| DDTC114ECA | Transistor in SOT23 package, NPN type, with a 50V, 0.1A rating | diodes incorporated | 3~7 Days | 5,643 | ||
| DAP202K | Dual Element Rectifier Diode rated at 0.1A and 80V Reverse Voltage, made of Silicon, in SMD3 package with SC-59 form factor and 3-pin configuration | Rohm Semiconductor | 3~7 Days | 4,062 | ||
| BF1107,215 | High-power switching device for demanding application | Nxp | 3~7 Days | 4,195 | ||
| BAT18 | High-performance semiconductor switch for efficient circuit control ( character | Nxp | 3~7 Days | 3,574 | ||
| A1302ELHLT-T | T/R Hall Effect Sensor A1302ELHLT-T | Allegro Microsystems | OBSOLETE | 3~7 Days | 7,555 | |
| 2SA1162-Y | SA1162-Y, "SOT-23 Bipolar Transistors - BJT ROHS": | Toshiba Semiconductor And Storage | 3~7 Days | 4,317 | ||
| 1SS396(TE85L,F) | A Schottky rectifier diode set featuring a doubler function, with a 45V reverse voltage rating and housed in SC-59 package | Toshiba Semiconductor And Storage | 3~7 Days | 2,776 | ||
| BFT92 | Bipolar junction transistor (BJT) architecture provides reliable and consistent operation in harsh environments | Nxp | 3~7 Days | 5,528 | ||
| BFR520 | 9 GHz wideband transistor solution for cutting-edge wireless systems | Nxp | 3~7 Days | 5,757 | ||
| BCV46 | Low-voltage, high-current PNP device for power management application | Infineon | 3~7 Days | 7,397 | ||
| ZXTN2031F | NPN transistor with a SOT23 package, featuring a maximum voltage of 50V and a current rating of 5A | diodes incorporated | 3~7 Days | 5,592 | ||
| SSM3K329R | Packaged in tape and reel for automated assembly | Toshiba Semiconductor And Storage | 3~7 Days | 5,472 | ||
| KTY82/220 | NXP Semiconductors KTY82/TO-236AB//220/REEL 7 Q3/T4 *STANDARD MARK S | Freescale Semiconductor | 3~7 Days | 2,706 | ||
| FMMTL718 | SOT23, 1A, 20V, PNP | diodes incorporated | 3~7 Days | 6,401 | ||
| BCX41 | Compact, reliable and high-gain bipolar devices for diverse electronic need | Infineon | 3~7 Days | 7,963 | ||
| 2SC3392-5-TB-E | Bipolar NPN Transistor 2SC3392 | Onsemi | 3~7 Days | 5,092 | ||
| FMMT734 | FMMT734 is a PNP transistor with a maximum voltage rating of 100V and a current rating of 0.8A in SOT23 packaging | diodes incorporated | 3~7 Days | 7,576 | ||
| BFR35AP | Bipolar transistors | Infineon Technologies | ACTIVE | 3~7 Days | 7,218 | |
| ZXMN3A01F | a id 30v small signal field-effect transistor | Diodes Incorporated | Active | 3~7 Days | 6,545 | |
| BFT93 | High-frequency amplifier for demanding application | Nxp | 3~7 Days | 4,098 | ||
| S-5716ACDL2-M3T1U | Hall element magnetic sensor | ablic | ACTIVE | 3~7 Days | 9,898 | |
| DMPH6250SQ | DMPH6250SQ: A MOSFET designed for high-temperature environments, operating at 60V." | diodes incorporated | 3~7 Days | 7,950 | ||
| BAV99 | Low-voltage device ideal for automotive, industrial and medical application | Rectron | 3~7 Days | 10,000 | ||
| 2SK2158-T1B-A | Renesas Electronics 2SK2158-T1B-A | Renesas Electronics America Inc | 3~7 Days | 3,978 | ||
| IRLML0100TRPBF | Single N-Channel HEXFET Power MOSFET | Infineon | ACTIVE | 3~7 Days | 8,545 | |
| IRFML8244TRPBF | Specifications: 25V voltage rating, 5 | Infineon | ACTIVE | 3~7 Days | 5,151 | |
| CPH3461-TL-W | N-channel MOSFET with a maximum current rating of 350mA and a voltage rating of 250V with a threshold voltage of 2.5V | onsemi | OBSOLETE | 3~7 Days | 9,903 | |
| MMBT5551 | NPN, 160V, 0.6A, SOT23 | Onsemi | 3~7 Days | 5,493 | ||
| FMMT718 | Small Signal Bipolar Transistor, 1.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon | Diodes Incorporated | 3~7 Days | 4,499 | ||
| KTY82/210 | Analog Current Output Silicon Temperature Sensor | Freescale Semiconductor | 3~7 Days | 30,000 | ||
| BZX84/C15 | Zener Diodes 15V SOT23 300mW Zene r | Rectron | 3~7 Days | 4,502 | ||
| MMBT3906 | PNP, 40V, 0.2A, SOT23 | Onsemi | 3~7 Days | 7,149 | ||
| HSM83TL-E | Diode for High-Voltage Switching | Renesas Electronics Corporation | 3~7 Days | 2,534 | ||
| FMMT491 | Bipolar Transistors - BJT Discrete Semiconductor Products Transistors (BJT) - Single - TRANS HP NPN 60V 1000MA SOT23-3 | Diodes Incorporated | 3~7 Days | 3,385 | ||
| FMMT493 | Bipolar Transistors - BJT Discrete Semiconductor Products Transistors (BJT) - Single - TRANS HP NPN 100V 1000MA SOT23-3 | Diodes Incorporated | 3~7 Days | 2,409 |
Additional Package/Case