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SOT323-3 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| BAV70W,115 | Diodes - General Purpose, Power, Switching BAV70W/SOT323/SC-70 | Nexperia Usa Inc. | Active | 3~7 Days | 5,317 | |
| BSS84AKW,115 | 150mA P-Channel MOSFET with 50V rating | Nexperia Usa Inc. | ACTIVE | 3~7 Days | 6,600 | |
| BSS123WQ-7-F | Offers improved efficiency and reliability for a variety of electronic devices | Diodes Incorporated | Active | 3~7 Days | 5,122 | |
| RU1J002YNTCL | 50V N-channel MOSFET with SOT323FL package, rated at 200mA | Rohm Semiconductor | 3~7 Days | 4,457 | ||
| BFR183W | Single-element Transistor for RF Applications | Infineon Technologies | NRND | 3~7 Days | 7,939 | |
| BSS214NW | Small-Scale Signal Transistor" | INFINEON | NRND | 3~7 Days | 3,065 | |
| BSS138W H6327 | 3-Pin SOT-323 Package MOSFET suitable for Automotive Applications | Infineon Technologies | 3~7 Days | 3,807 | ||
| DMN3067LW-7 | Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-323 T/R | Diodes Incorporated | ACTIVE | 3~7 Days | 9,491 | |
| 1SS302A,LF | High-speed Si Diode for Automotive Use | Toshiba Semiconductor And Storage | ACTIVE | 3~7 Days | 6,941 | |
| BZX84W-C3V3F | 3V 5% 275mW 3-Pin SC-70 T/R | Nexperia Usa Inc. | 3~7 Days | 7,146 | ||
| MCH3377-TL-W | Trans MOSFET P-CH 20V 3A 3-Pin SOT-323 T/R | Onsemi | Obsolete | 3~7 Days | 9,642 | |
| VCAN26A2-03GHE3-18 | ESD Suppressors / TVS Diodes BiSy ESD-Prot Diode Dual-Line AEC-Q101 | Siliconix | 3~7 Days | 2,654 | ||
| STM1061N31W6F | Supervisory Circuits Low Power volt Detector | Stmicroelectronics | 3~7 Days | 6,830 | ||
| BSS138WH6327XTSA1 | AEC-Q101-compliant N-channel MOSFET tailored for automotive environments, offering a voltage handling of 60V and a current capacity of 0 | Infineon Technologies | ACTIVE | 3~7 Days | 7,858 | |
| BSS209PWH6327XTSA1 | The BSS209PWH6327XTSA1 MOSFET is designed for P-channel configurations | Infineon Technologies | ACTIVE | 3~7 Days | 8,733 | |
| BSS84PWH6327XTSA1 | Product Description: BSS84PWH6327XTSA1 is a P-Channel MOSFET manufactured by Infineon | Infineon Technologies | ACTIVE | 3~7 Days | 5,139 | |
| BSS138W-7-F | N-channel MOSFET with a voltage rating of 50V and a maximum current rating of 0.2A in a SOT323 package | Diodes Incorporated | 3~7 Days | 2,890 | ||
| PJC7400_R1_00001 | 30V 1.9A MOSFET with low on-state resistance | Panjit | 3~7 Days | 7,453 | ||
| PJC7412_R1_00001 | ESD Protected MOSFET with 30V Voltage Rating | Panjit | 3~7 Days | 4,433 | ||
| DMN62D0UW-7 | 1.2A Drain Current | Diodes Incorporated | ACTIVE | 3~7 Days | 9,078 | |
| DMN2058UW-7 | This MOSFET device from Diodes Inc. is suitable for various applications requiring a reliable power switch | Diodes Incorporated | ACTIVE | 3~7 Days | 6,358 | |
| RRF015P03GTL | Ideal for applications requiring low power consumption and efficient switching | Rohm Semiconductor | 3~7 Days | 3,209 | ||
| MMST3904-7-F | NPN Single Bipolar Transistor, 40 V, 200 mA, 200 mW, SOT-323 Surface Mount, Tape and Reel Packaging | Diodes Incorporated | ACTIVE | 3~7 Days | 6,873 | |
| DTC143EUAT106 | 30 pieces of pre-biased NPN digital transistors with a rating of 10mA and 5V | Rohm Semiconductor | ACTIVE | 3~7 Days | 6,894 | |
| DMG1013UW-7 | MOSFET P-Ch with Enhanced -20V VDSS | Diodes Incorporated | ACTIVE | 3~7 Days | 8,840 | |
| BSS138WH6433XTMA1 | N-channel MOSFET Transistor by Infineon, Model BSS138WH6433XTMA1, with 0.28 A and 60 V capabilities | Infineon Technologies | Active | 3~7 Days | 5,299 | |
| BAV199WQ-7 | 25V Forward Voltage Drop | Diodes Incorporated | ACTIVE | 3~7 Days | 9,947 | |
| BAT 64-05W H6327 | 570mV forward voltage at 100mA | Infineon Technologies | 3~7 Days | 6,007 | ||
| BC847BW-7-F | BC847BW-7-F is a small, high-speed transistor that operates efficiently within a voltage range of 45V and a current rating of 0 | Diodes Incorporated | ACTIVE | 3~7 Days | 6,380 | |
| BC807-40W-7 | SOT-323 Package Type | Diodes Incorporated | 3~7 Days | 4,016 | ||
| 2SD2351T106V | Transistors - BJT NPN 50V 150mA | Rohm Semiconductor | Active | 3~7 Days | 8,427 | |
| DTC143XU3HZGT106 | DTC143XU3HZGT106: NPN Digital Transistor Designed for Automotive Applications, SOT-323 Package | Rohm Semiconductor | 3~7 Days | 4,983 | ||
| HSMS-286C-BLKG | Schottky Diodes & Rectifiers with 4 VBR and 0.3 pF capacitance | Broadcom Limited | Obsolete | 3~7 Days | 5,184 | |
| HSMS-285B-TR2G | Low-frequency RF/ID RF Detector | Broadcom Limited | 3~7 Days | 3,256 | ||
| 2SC4215-Y(TE85L,F) | Trans RF BJT NPN 30V 0.02A 100mW 3-Pin USM T/R | Toshiba Semiconductor And Storage | 3~7 Days | 6,097 | ||
| DTC113ZU3T106 | DTC113ZU3T106: NPN digital transistor housed in SOT-323 package | Rohm Semiconductor | 3~7 Days | 5,605 | ||
| HSMS-286C-TR1G | SOT-323-packaged HSMS-286C-TR1G, a Schottky diode implemented within a hybrid IC using surface-mount technology | Broadcom Limited | OBSOLETE | 3~7 Days | 8,664 | |
| MA4E2054B1-1146T | 3-Pin SOT-323 Schottky RF Diode, 3V, Tape and Reel Packaging | Macom Technology Solutions | ACTIVE | 3~7 Days | 8,885 | |
| MCH3484-TL-W | TL-W series MOSFET with N-channel design, specifically engineered for 0.9V drive applications | Onsemi | OBSOLETE | 3~7 Days | 6,454 | |
| RJU003N03T106 | Three-pin ultra-miniature transistor featuring a N-channel MOSFET design capable of handling 30 volts and 0.3 amps | Rohm Semiconductor | NRND | 3~7 Days | 8,639 |
Additional Package/Case