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TFSOP-48 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| S29JL032J70TFI010 | Compact form factor with 32 Megabytes of memory | Infineon Technologies | 3~7 Days | 7,631 | ||
| MT29F32G08CBADAWP:D | 2Gbit, 3.3V, 4G x 8, Parallel | Micron Technology | 3~7 Days | 4,677 | ||
| MT29F64G08CBABAWP:B | High capacity storage solution | Micron Technology | 3~7 Days | 4,438 | ||
| NAND256W3A2BN6E | NAND256W3A2BN6E is a reliable and efficient storage solution for various applications requiring fast data processing | Stmicroelectronics | 3~7 Days | 6,857 | ||
| M29W400DT55N6E | Standard Flash memory unit - M29W400DT55N6E" | Stmicroelectronics | OBSOLETE | 3~7 Days | 3,108 | |
| M29W400DT70N6E | Specifications of product M29W400DT70N6E, TSOP-48 NOR FLASH ROHS | Stmicroelectronics | 3~7 Days | 6,463 | ||
| W29GL064CB7S | High-density storage solution for embedded syste | Winbond Electronics | 3~7 Days | 3,603 | ||
| MT29F32G08AFACAWP-ITZ:C | Top-of-the-line NAND Flash memory solution, ideal for applications requiring high-speed data processing and storage." | Micron Technology | 3~7 Days | 4,992 | ||
| MT29F64G08CBAAAWP:A | Parallel Interface with 48 Pins | Micron Technology | 3~7 Days | 5,048 | ||
| MT29F2G16ABAEAWP-IT:E | 2 Gigabyte capacity, organized as 128 megabytes by 16 bits | Micron Technology | 3~7 Days | 7,083 | ||
| MT29F2G16ABAEAWP:E | 48-Pin TSOP-I Tray | Micron Technology | 3~7 Days | 4,934 | ||
| MT29F128G08AJAAAWP-IT:A | 9F128G08AJAAAWP-IT:A Flash memory, 16GB x8, 20ns, PDSO48 | Micron Technology | 3~7 Days | 4,840 | ||
| MX30LF1G08AA-TI | 0LF1G08AA-TI product description | Macronix | 3~7 Days | 6,363 | ||
| M29W400DB55N6E | A high-capacity parallel flash memory chip for efficient data storage and retrieva | Stmicroelectronics | 3~7 Days | 5,112 | ||
| M29W320EB70N6E | TSOPI-48 NOR flash with no harmful substances | Stmicroelectronics | OBSOLETE | 3~7 Days | 6,505 | |
| M29W800DB45N6E | TSOP-48 package | Stmicroelectronics | 3~7 Days | 3,898 | ||
| MT29F8G08ABABAWP-IT:B | 3 Volt Operation | Micron Technology | OBSOLETE | 3~7 Days | 6,356 | |
| MT29F64G08AJABAWP-IT:B | Parallel 3.3V TSOP-I | Micron Technology | OBSOLETE | 3~7 Days | 5,071 | |
| MT29F256G08CJABBWP-12IT:B | 256G-bit Capacity | Micron Technology | OBSOLETE | 3~7 Days | 4,637 | |
| MX29GL640ETTI-70G | MO-142, TSOP-48 package | Macronix | ACTIVE | 3~7 Days | 7,539 | |
| MX29GL320ETTI-70G | 32Mbit Parallel TFSOP-48-18.4mm NOR FLASH ROHS | Macronix | 3~7 Days | 3,679 | ||
| MX29F800CBTI-70G | NOR FLASH ROHS MX29F800CBTI-70G TSOPI-48 | Macronix | ACTIVE | 3~7 Days | 7,232 | |
| MT29F256G08CJAAAWP:A | 20ns Access Time | Micron Technology | 3~7 Days | 4,338 | ||
| 9DB801CGLF | PCIe Gen1 Buffer with 8 Differential Outputs | Renesas Electronics America Inc | 3~7 Days | 2,945 | ||
| XQF32PVOG48M | This Configuration PROM operates at a voltage of 1.8V and has a 48-Pin TSOP interface | AMD | OBSOLETE | 3~7 Days | 5,545 | |
| XCF08PVO48C | Configuration Memory, 8MX1, Serial, CMOS, PDSO48, PLASTIC, TSOP-48 | AMD | ACTIVE | 3~7 Days | 6,840 | |
| RMLV0816BGSA-4S2#AA0 | Offering 8 megabits of Static Random Access Memory (SRAM) at 3 volts | Renesas Electronics America Inc | Active | 3~7 Days | 6,161 | |
| MT29F64G08AFAAAWP-ITZ:A | Dual Die Package | Micron | ACTIVE | 3~7 Days | 7,755 | |
| E28F200B5T80 | ROHS-compliant Microcontroller Units (MCUs/MPUs/SOCs) in TFSOP-48-18.4mm package | Intel | 3~7 Days | 2,920 | ||
| IS61WV204816ALL-10TLI | 2M x 16 Configuration | Integrated Silicon Solution Inc | 3~7 Days | 4,721 | ||
| AS29CF160B-55TIN | Parallel FLASH memory IC in TSOP48 package, offering 16Mb capacity, 2Mx8bit configuration, and 55ns speed | Alliance | ACTIVE | 3~7 Days | 9,104 | |
| IS61WV204816ALL-12TLI | IS61WV204816ALL-12TLI - SRAM 32Mb | Issi, Integrated Silicon Solution Inc | 3~7 Days | 3,482 | ||
| CY62157H30-55ZSXE | High-speed operation for fast data transfer and processin | Infineon | 3~7 Days | 6,589 | ||
| S34ML01G204TFA010 | 1Gbit NAND flash memory module with a voltage range of 2.7V to 3.6V, presented in TFSOP-48-18.4mm packaging compliant with RoHS standards." | Cypress Semiconductor Corp | 3~7 Days | 6,285 | ||
| CY62167G30-55ZXE | High-speed, low-power SRAM chip for automotive application | Infineon | 3~7 Days | 6,909 | ||
| NAND256W3A2BNXE | NAND flash memory in TSOP-48 package with RoHS certification | Micron Technology | 3~7 Days | 3,192 | ||
| MT29F256G08CJAABWP-12:A | This NAND flash chip offers high density storage with a capacity of 32 gigabytes, utilizing MLC technology for improved memory cell efficiency | Micron Technology | OBSOLETE | 3~7 Days | 5,228 | |
| MX30UF1G18AC-TI | 1Gbit TFSOP-48-18.4mm NAND FLASH ROHS | Macronix | 3~7 Days | 2,858 | ||
| MT29F16G08ABABAWP-IT:B TR | 16 Gigabit Capacity | Micron Technology | 3~7 Days | 2,988 | ||
| S34MS04G200TFI000 | In stock, ships today | Skyhigh Memory | OBSOLETE | 3~7 Days | 9,849 |
Additional Package/Case