TO-247-4 Related Product

Part Number Description Brand Lifecycle Status Cargo cycle In Stock Operation
IKZ75N65EL5 TO-247-4 IGBTs with ROHS compliance infineon Unconfirmed 3~7 Days 8,166
IMZ120R060M1H High-power field-effect transistor for demanding applications infineon ACTIVE 3~7 Days 5,397
IKZ75N65EH5 High-Efficiency Trans IGBT Chip, N-Channel, 650V, 90A, TO-247 Package infineon ACTIVE 3~7 Days 9,065
STC04IE170HP Emitter Switched Bipolar Transistor (TO-247 Tube, 4-Pin + Tab) STMicroelectronics OBSOLETE 3~7 Days 5,705
SCT3080KRC14 The SCT3080KRC14 MOSFET is a top-tier N Channel device, capable of managing voltages up to 1 Rohm Semiconductor ACTIVE 3~7 Days 9,112
UF3SC065007K4S Specifications: 650V maximum voltage, 120A maximum current, 9mΩ on-resistance at 50A Qorvo Active 3~7 Days 6,338
SCT4026DRHRC15 750V, 56A TO-247 Rohm Semiconductor ACTIVE 3~7 Days 6,003
UF3C065040K4S Product UF3C065040K4S is a MOSFET boasting a high voltage rating of 650V Qorvo ACTIVE 3~7 Days 5,163
IGZ100N65H5 IGBT Transistors INDUSTRY 14 Infineon Technologies ACTIVE 3~7 Days 8,038
IMZ120R045M1 Trench MOSFET Silicon Carbide MOSFET 1200V SiC infineon NRND 3~7 Days 9,197
UJ4C075060K4S 750 volt SiC FET with 58 milliohm on-state resistance Qorvo ACTIVE 3~7 Days 5,181
G2R50MT33K Silicon Carbide MOSFET with a voltage rating of 3300V and a low on-resistance of 50mohm in a TO-247-4 package GeneSiC Semiconductor ACTIVE 3~7 Days 5,803
G3R45MT17K Silicon Carbide N Channel Enhancement Mode MOSFET GeneSiC Semiconductor ACTIVE 3~7 Days 8,911
G3R40MT12K SiC N-Channel MOSFET Rated at 1.2kV, 71A, 333W GeneSiC Semiconductor ACTIVE 3~7 Days 7,488
NTH4L080N120SC1 MOSFET SIC MOS TO247-4L 80MOHM 1200V Onsemi 3~7 Days 3,701
MSC080SMA330B4 MOSFET MOSFET SIC 3300 V 80 mOhm TO-247-4 Microchip Technology ACTIVE 3~7 Days 5
FMG50AQ120N6 High-Power MOSFET FMG50AQ120N6 SanRex Active 3~7 Days 8,883
UF4C120070K4S MOSFET 1200V/70mOhm, N-Off SiC CASCODE, G4 FAST, TO-247-4L, REDUCED RTH Qorvo Active 3~7 Days 6,754
NVH4L040N120SC1 MOSFET Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247-4L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, TO247?4L Onsemi Active 3~7 Days 7,043
FCH041N65EFL4 MOSFET 650V 76A NChn MOSFET SuperFET II, FRFET Onsemi NRND 3~7 Days 7,325