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TO-251 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| 2SK2414 | Small Signal Field-Effect Transistor, 10A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP-3, 3 PIN | NEC | 3~7 Days | 6,468 | ||
| FQU17P06TU | Power MOSFET, P-Channel, QFET®, -60 V, -12 A, 135 mΩ, IPAK, 5040-TUBE | Onsemi | 3~7 Days | 5,092 | ||
| FQU11P06 | Power MOSFET with P-Channel, QFET®, -60 V, -9.4 A, 185 mΩ, IPAK | FAIRCHILD | 3~7 Days | 5,371 | ||
| RFD3055 | Featuring a robust IPAK package, the RFD3055 MOSFET complies with ROHS standards, guaranteeing environmentally friendly manufacturing practices | Onsemi | 3~7 Days | 6,865 | ||
| IRLU2905 | 42A I(D) Power Field-Effect Transistor, 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3 | INFINEON | OBSOLETE | 3~7 Days | 6,809 | |
| IRFU5305 | IPAK Tube Enclosed P-Channel Silicon MOSFET, Rated for 55V Voltage and 31A Current | INFINEON | Active | 3~7 Days | 4,677 | |
| 2SC2983 | DPAK NPN Transistor 160V 1500mA | KEC | 3~7 Days | 7,583 | ||
| L78M05CDT-1 | 0V 0.5A Positive | STMicroelectronics | Obsolete | 3~7 Days | 4,374 | |
| IRLU3410 | 251AA 17A 100V 0.125ohm | INFINEON | 3~7 Days | 3,956 | ||
| IRFU024N | Tube Packaging for IRFU024N: N-Channel MOSFET with Silicon Construction, Rated for 55V Voltage and Capable of Handling 17A Current | INFINEON | 3~7 Days | 4,218 | ||
| 2SK4021 | This FET General Purpose Power transistor has a low on-resistance of 1 ohm | TOSHIBA | 3~7 Days | 6,766 | ||
| 2SC5548A | 400V 2A NPN Bipolar Junction Transistor, 1000mW, 3-Pin (2+Tab), New PW-Mold | TOSHIBA | 3~7 Days | 3,088 | ||
| IRFU210A | IPAK-3 Power FET IRFU210A: A single-element field-effect transistor featuring N-channel silicon technology, capable of handling currents up to 2 | INFINEON | 3~7 Days | 3,439 | ||
| 2SK4019 | N-Channel Power MOSFET Transistor | TOSHIBA | 3~7 Days | 3,009 | ||
| 2SA1225 | Bipolar transistor with 160V rating | KEC | 3~7 Days | 6,356 | ||
| 2SB1202 | Bipolar transistor designed for low-power electronics | SONY | 3~7 Days | 4,047 | ||
| 2SB1261 | TO-252-2 Bipolar Junction Transistors (BJT) Conforming to ROHS | NEC | 3~7 Days | 3,191 | ||
| 2SA1241 | General Purpose Transistor 2SA1241: Operating as a PNP silicon transistor | TOSHIBA | 3~7 Days | 6,663 | ||
| 2SK3113 | Small Signal Field-Effect Transistor, 2A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251, MP-3, 3 PIN | Renesas Electronics | 3~7 Days | 5,186 | ||
| 2SA1412 | NEC | 3~7 Days | 5,756 | |||
| 2SB1204 | High-Current Switching Applications | SANYO | Active | 3~7 Days | 3,525 | |
| 2SC3518 | French Electronic Distributor since 1988 | NEC | 3~7 Days | 5,806 | ||
| FQU10N20L | Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | FAIRCHILD | 3~7 Days | 6,311 | ||
| S6004VS2 | S6004VS2 is a Silicon Controlled Rectifier capable of handling a continuous RMS current of 4A | Littelfuse Inc. | OBSOLETE | 3~7 Days | 8,595 | |
| RURD660 | General Purpose Diodes: RURD660 - Capable of Handling 6A at 600V | Onsemi | OBSOLETE | 3~7 Days | 8,239 | |
| KSH122ITU | Darlington Transistors NPN Si Transistor Darlington | Onsemi | Obsolete | 3~7 Days | 7,562 | |
| 2SC5706 | High-performance device for switching and linear application | Onsemi | 3~7 Days | 7,042 | ||
| IRFU320PBF | Trans MOSFET N-CH 400V 3.1A 3-Pin(3+Tab) IPAK | vishay | ACTIVE | 3~7 Days | 6,265 | |
| SPU02N60C3 | N-channel 600V 1.8A power MOSFET in TO-251 package | infineon | NRND | 3~7 Days | 8,796 | |
| RHRD660 | Rectifier Diode with Avalanche feature, Single Phase, 1 Element, 6A, 600V Reverse Voltage Rating, Silicon | Onsemi | OBSOLETE | 3~7 Days | 8,984 | |
| RHRD460 | Diode RHRD460 Intersil | Onsemi | OBSOLETE | 3~7 Days | 5,300 | |
| RHRD4120 | Rectifiers capable of handling 4 Amps at 1200 Volts | Onsemi | OBSOLETE | 3~7 Days | 5,927 | |
| AOU3N60 | TO-251-packaged transistor with N-channel enhancement mode for efficient power handling | Alpha & Omega Semiconductor Inc. | NRND | 3~7 Days | 6,945 | |
| S6004VS2TP | Thyristor SCR 600V 30A | Littelfuse Inc. | 3~7 Days | 6,638 | ||
| RURD4120 | TO-packaged rectifier diode for high-voltage us | Onsemi | OBSOLETE | 3~7 Days | 6,099 | |
| IGU04N60T | -pin TO-251 package | Infineon | Active | 3~7 Days | 5,080 | |
| IPU60R1K5CEBKMA1 | MOSFET N-Ch 600V 3.1A IPAK-3 | Infineon | Obsolete | 3~7 Days | 8,897 |
Additional Package/Case