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TO-3P Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| FGH40N60SF | High performance IGBT with 600V voltage rating, 40A current rating, 2.3V voltage drop, and TO-247 package | Onsemi | 3~7 Days | 3,169 | ||
| BUH1215 | TO-218 Power Transistor | Stmicroelectronics | 3~7 Days | 4,927 | ||
| BU2725DX | Seamlessly integrates motor control, sensing and protection functions for efficient automotive electronics | Nxp Semiconductors | 3~7 Days | 3,743 | ||
| 2SA1117 | High-performance switch capable of handling moderate voltage and current levels with minimal distortio | New Jersey Semiconductor Products Inc | 3~7 Days | 4,586 | ||
| 2SC3181N | Operates at remarkable speed | Toshiba America Electronic Components | 3~7 Days | 4,214 | ||
| 2SC4157 | Precision frequency control and amplificati | Toshiba America Electronic Components | 3~7 Days | 5,188 | ||
| 2SC2580 | High-performance NPN transistor for robust audio output solutions | Inchange Semiconductor Company Ltd | 3~7 Days | 3,217 | ||
| 2SK790 | Trans MOSFET 2SK790 is a N-type Silicon transistor with a maximum voltage capacity of 500V and a current rating of 15A in a TO-3P package | Toshiba | 3~7 Days | 3,340 | ||
| 2SK1531 | N-channel silicon power MOSFET rated at 15 amperes and 500 volts, with a low on-resistance of 0.45 ohms, housed in a TO-3PN package | Toshiba | 3~7 Days | 7,777 | ||
| LT1083CP-5 | Single-output linear regulator providing a stable 5V output voltage | Analog Devices | 3~7 Days | 3,516 | ||
| 2SJ554 | Power Field-Effect Transistor, 45A I(D), 60V, 0.055ohm | Renesas | 3~7 Days | 6,846 | ||
| IRFPS3815 | TO-274AA package MOSFET Transistor with N-type channel, 150V and 105A | INFINEON | 3~7 Days | 3,125 | ||
| GT50J327 | GT50J327 is a high-power switching N-channel IGBT module for industrial and automotive applications. | TOSHIBA | 3~7 Days | 5,025 | ||
| RJK6015 | RJK6015 chip is a high-voltage power MOSFET designed for switching applications. | Renesas Electronics | 3~7 Days | 7,362 | ||
| CT60AM18F | CT60AM18F chip is a high-performance microprocessor designed for embedded systems and IoT applications. | MITSUBISHI | 3~7 Days | 5,417 | ||
| 2SC3012 | NPN TO-247VAR Bipolar Junction Transistor | NEC | 3~7 Days | 3,760 | ||
| 2SK3337 | The 2SK3337 is an N-channel power MOSFET with low on-resistance and high-speed switching capabilities. | FUJITSU | 3~7 Days | 3,804 | ||
| MJ21193G/MJ21194G | MJ21193G/MJ21194G are power transistors designed for high power audio amplifiers and power supplies. | Onsemi | 3~7 Days | 6,513 | ||
| QM5HL-24 | QM5HL-24 is a high-performance microcontroller chip designed for IoT applications | MITSUBISHI | 3~7 Days | 4,861 | ||
| 2SK2995 | TRANSISTOR 30 A, 250 V, 0.068 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-16F1B, 3 PIN, FET General Purpose Power | TOSHIBA | 3~7 Days | 4,133 | ||
| 2SK1936 | Fast Switching Speed | FUJITSU | 3~7 Days | 3,543 | ||
| 2SC3030 | Triple Diffused Planer Type High Power Darlington High Voltage High Speed Switching | FUJITSU | 3~7 Days | 7,714 | ||
| 2SK902 | Power Field-Effect Transistor, 30A I(D), 250V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | FUJITSU | 3~7 Days | 6,503 | ||
| FQA55N10 | 100V N-Channel QFET MOSFET | Onsemi | Obsolete | 3~7 Days | 6,631 | |
| MJW21192 | Transistor MJW21192 with 8A current and 150V voltage, NPN type, in TO-247 package | Onsemi | 3~7 Days | 4,959 | ||
| IXFH32N50 | High voltage MOSFET rated at 500V and capable of handling 32A current | IXYS | 3~7 Days | 5,014 | ||
| IXTQ50N25T | 3-pin TO-3P Power Transistor | IXYS | 3~7 Days | 6,329 | ||
| IXTQ480P2 | Silicon N-Channel Power MOSFET with 52 Amperes Drain Current Capability, 500 Volts Maximum Voltage, 0 | IXYS | 3~7 Days | 4,679 | ||
| IXTQ130N10T | Suitable for use in a variety of circuits requiring high current switching capabilities | IXYS | Active | 3~7 Days | 4,014 | |
| FDA18N50 | Power MOSFET, N-Channel, UniFETTM, 500 V, 19 A, 265 mΩ, TO-3P, 450-TUBE | Onsemi | 3~7 Days | 5,309 | ||
| FGH40N60UF | IGBT, 600 volts, 40 amperes, Field Stop technology | Onsemi | 3~7 Days | 6,871 | ||
| FCA20N60 | Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, TO-3P, 450-TUBE | Onsemi | 3~7 Days | 5,969 | ||
| BUS48AP | Wide supply voltage range and low quiescent current ensured | New Jersey Semiconductor Products Inc | 3~7 Days | 7,674 | ||
| BUZ384 | N-Channel MOSFET Transistor, TO-218AA Package | Infineon Technologies Ag | 3~7 Days | 5,781 | ||
| 2SK414 | MOSFET transistor with N-channel | Hitachi Ltd | 3~7 Days | 3,519 | ||
| 2SC3853 | Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, NPN, TO-3P, Silicon | Sanken Electric Co Ltd | 3~7 Days | 6,849 | ||
| 2SA1264N | Power transistor 8A, 120V PNP silicon | Inchange Semiconductor Company Ltd | 3~7 Days | 5,640 | ||
| 2SC5354 | 2-16C1A 3-pin silicon NPN transistor | Toshiba | 3~7 Days | 5,463 | ||
| 2SA1103 | Bipolar Junction Transistor TO-218VAR PNP Type | New Jersey Semiconductor Products Inc | 3~7 Days | 6,549 | ||
| 2SA1265N | POWER BIPOLAR TRANSISTOR, 10A I(C), 140V V(BR)CEO, 1-ELEMENT, PNP | Inchange Semiconductor Company Ltd | 3~7 Days | 4,341 |
Additional Package/Case