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TO220 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| SUP75N06-08 | 75A, 60V MOSFET with 250W Power Dissipation | Vishay | 3~7 Days | 7,371 | ||
| MTP75N05HD | Voltage regulator | Onsemi | 3~7 Days | 6,117 | ||
| IRFB11N50A | Product description for IRFB11N50A includes MOSFET with recommended alternative 844-IRFB11N50APBF | VISHAY | 3~7 Days | 3,021 | ||
| IRF644N | IRF644N MOSFET for up to 250 volts and 14 amps | VISHAY | 3~7 Days | 6,664 | ||
| IRFB4620PBF | N-type MOSFET IRFB4620PBF rated at 200V in TO-220AB package | INFINEON | 3~7 Days | 7,729 | ||
| IRF135B203 | Introducing IRF135B203: A MOSFET component engineered to withstand voltages up to 135V and currents up to 145A | INFINEON | Active | 3~7 Days | 6,412 | |
| IRF2805PBF | Featuring a TO-220-3 package, the IRF2805PBF is a HEXFET® Power Mosfet designed with a single N-Channel configuration | INFINEON | 3~7 Days | 4,373 | ||
| UF1010EL | UF1010EL chip is a low-voltage MOSFET with high efficiency and fast switching capabilities. | UTC | 3~7 Days | 6,484 | ||
| MGP20N40CL | Switching controllers for MGP20N40CL | Onsemi | 3~7 Days | 3,562 | ||
| 2SD1408 | General Purpose Power NPN Si | Toshiba America Electronic Components | 3~7 Days | 7,745 | ||
| 2N6507G | With its sturdy construction and reliable performance | LITTELFUSE | 3~7 Days | 5,204 | ||
| IXTP01N100D | N-Channel Silicon Power MOSFET with 1KV Rating in TO-220AD Package | LITTELFUSE | 3~7 Days | 5,735 | ||
| IRLZ44PBF | Power MOSFET | VISHAY | Active | 3~7 Days | 5,133 | |
| IRLZ14PBF | Power MOSFET, N Channel, 60 V, 10 A, 0.2 ohm, TO-220AB, Through Hole | VISHAY | Active | 3~7 Days | 3,697 | |
| IRF9510PBF | HEXFET MOSFET 100V P-Channel MOSFET | VISHAY | Active | 3~7 Days | 5,330 | |
| IRF9Z20 | Power Field-Effect Transistor, 9.7A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | IR | 3~7 Days | 4,403 | ||
| IRF9Z34 | MOSFET P-CH 60V 18A TO220AB | VISHAY | 3~7 Days | 7,038 | ||
| IRF830A | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | VISHAY | 3~7 Days | 5,856 | ||
| IRL510 | Third generation power MOSFET provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. | VISHAY | 3~7 Days | 4,237 | ||
| IRFBE30 | Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | VISHAY | 3~7 Days | 7,054 | ||
| IRFB13N50A | MOSFET N-Chan 500V 14 Amp | VISHAY | 3~7 Days | 6,084 | ||
| IRF9Z30 | TRANSISTOR 18 A, 50 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | VISHAY | 3~7 Days | 3,937 | ||
| IRFZ14 | MOSFET N-CH 60V 10A TO220AB | VISHAY | 3~7 Days | 4,085 | ||
| IRFZ10 | Mosfet N-ch 60V 10A TO-220AB | VISHAY | 3~7 Days | 4,085 | ||
| IRFB17N50L | Power Field-Effect Transistor, 16A I(D), 500V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | VISHAY | 3~7 Days | 3,293 | ||
| IRF720 | MOSFET N-CH 400V 3.3A TO220AB | VISHAY | 3~7 Days | 4,066 | ||
| IRF820A | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | VISHAY | Discontinued | 3~7 Days | 4,578 | |
| IRLZ24 | Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | VISHAY | 3~7 Days | 4,660 | ||
| IRF9520 | Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | VISHAY | Discontinued | 3~7 Days | 7,572 | |
| IRF9Z14 | Mosfet, Power; P-channel; 0.50 Ohms @ 10 V, 4 A; 20 V (max.); 43 W (max.) | VISHAY | 3~7 Days | 7,781 | ||
| IRFBF30 | Power Field-Effect Transistor, 3.6A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | VISHAY | 3~7 Days | 7,614 | ||
| IRF840A | Trans MOSFET N-Channel 500V 8A 3-Pin TO-220AB - Tape and Reel | VISHAY | 3~7 Days | 3,055 | ||
| IRFBF20 | Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | VISHAY | 3~7 Days | 5,874 | ||
| IRFBC30A | IRFBC30A: A MOSFET alternative recommended as the replacement for 844-IRFBC30APBF | VISHAY | 3~7 Days | 4,664 | ||
| IRLZ14 | The IRLZ14PBF is a 60V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. | VISHAY | 3~7 Days | 7,518 | ||
| IRF840LC | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | VISHAY | 3~7 Days | 3,139 | ||
| IRFB9N60A | Trans MOSFET N-CH 600V 9.2A 3-Pin(3+Tab) TO-220AB | VISHAY | 3~7 Days | 5,598 | ||
| IRFB9N65A | Power Field-Effect Transistor, 8.5A I(D), 650V, 0.93ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | VISHAY | 3~7 Days | 7,110 | ||
| IRFBE20 | Power Field-Effect Transistor, 1.8A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | VISHAY | 3~7 Days | 3,385 | ||
| IRF9610 | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | VISHAY | 3~7 Days | 4,151 |
Additional Package/Case