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TO247AD-3 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| IXGH32N60C | Insulated Gate Bipolar Transistors with 2.5 ohms on-state resistance | Ixys Integrated Circuits Division | OBSOLETE | 3~7 Days | 5,012 | |
| IXGH30N120B3D1 | 1200-Volt, 300-Watt IGBT in Through-Hole TO-247AD Package | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 8,034 | |
| IXXH80N65B4H1 | Non-repetitive peak reverse avalanche energy | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 6,704 | |
| IXXH80N65B4 | Trans IGBT Chip N-CH 650V 160A 625W 3-Pin TO-247AD | Ixys Integrated Circuits Division | 3~7 Days | 6,989 | ||
| IXXH60N65C4 | 650V PT (Punch-Through) TO-247 IGBTs | Ixys Integrated Circuits Division | 3~7 Days | 3,651 | ||
| IXGH60N60C3D1 | Bipolar transistor with gate insulation | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 5,585 | |
| IXXH110N65C4 | 880 Watt 234 Amp 650 Volt PT TO-247AD IGBTs ROHS | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 8,289 | |
| IXBH42N250 | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | Ixys Integrated Circuits Division | 3~7 Days | 3,795 | ||
| IXGH40N60C2 | TO-247AD Packaged N-Channel IGBT Chip, 75A Continuous Current Rating | Ixys Corporation | OBSOLETE | 3~7 Days | 5,620 | |
| SF2004PT | 1 Phase Rectifier Diode with 2 Elements, 10 Amps, 200 Volts VRRM, Silicon, TO-247AD, Green Plastic, TO-3P, 3 Pins | Taiwan Semiconductor Corporation | ACTIVE | 3~7 Days | 8,659 | |
| IXGH10N60AU1 | N-Channel Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, TO-247AD Package | Ixys Integrated Circuits Division | OBSOLETE | 3~7 Days | 9,065 | |
| DPG30C400HB | 30 Amps and 400V diodes designed for various general-purpose, power, and switching tasks | Ixys Integrated Circuits Division | Active | 3~7 Days | 7,984 | |
| DPG80C300HB | HiPerFRED 2nd Gen Fast Diodes: versatile components for power and switching needs | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 5,081 | |
| DSSK80-003B | High-performance, high-speed Schottky diode for demanding power systems | Ixys Integrated Circuits Division | 3~7 Days | 3,201 | ||
| IXGH56N60A3 | This TO-247AD packaged chip features a tab for easy mounting onto circuit boards | Ixys Integrated Circuits Division | 3~7 Days | 5,212 | ||
| IXGH40N60B2 | High Power IGBT | Ixys Integrated Circuits Division | OBSOLETE | 3~7 Days | 5,181 | |
| IXGH32N60B | Drop us a line for more on this product | Ixys Integrated Circuits Division | OBSOLETE | 3~7 Days | 6,405 | |
| IXGH30N60BD1 | Get in touch for more details | Ixys Integrated Circuits Division | OBSOLETE | 3~7 Days | 5,828 | |
| IXGH28N90B | N-Channel IGBT Chip for Power Applications | Ixys Integrated Circuits Division | 3~7 Days | 2,352 | ||
| IXGH24N60CD1 | Insulated Gate Bipolar Transistors with 48A Current and 600V Voltage Rating | Ixys Integrated Circuits Division | OBSOLETE | 3~7 Days | 6,012 | |
| IXGH24N60A | IXGH24N60A: High-power IGBT transistors designed for applications requiring up to 48 Amps of current and 600V of voltage | Ixys Integrated Circuits Division | OBSOLETE | 3~7 Days | 8,582 | |
| IXGH20N60AU1 | High current capacity MOSFET with low on-state resistance | Ixys Integrated Circuits Division | OBSOLETE | 3~7 Days | 9,851 | |
| IXGH15N120CD1 | Inquire for further information | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 9,745 | |
| IXGH10N100AU1 | IGBT Transistors rated at 1000v and 20A | Ixys Integrated Circuits Division | 3~7 Days | 5,305 | ||
| IRG7PH37K10D-EPBF | Summary: This product is an IGBT chip designed for high-power applications | Infineon Technologies | 3~7 Days | 6,529 | ||
| IXYH82N120C3 | Insulated Gate Bipolar Transistor with N-channel, 1200V and 200A, TO247AD package featuring XPT GenX3 technology | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 8,284 | |
| IXYH20N120C3D1 | IXYH20N120C3D1 is an N-channel Insulated Gate Bipolar Transistor (IGBT) Chip with specifications including a maximum voltage of 1200V | Ixys Integrated Circuits Division | 3~7 Days | 4,664 | ||
| IXYH20N120C3 | IXYH20N120C3 details: 278W power, 40A current, 1.2kV voltage, TO-247 package, ROHS compliant | Ixys Integrated Circuits Division | 3~7 Days | 7,518 | ||
| IXYH50N120C3 | IXYH50N120C3 Trans IGBT Chip with N-Channel Configuration | Ixys Integrated Circuits Division | 3~7 Days | 2,151 | ||
| IXYH40N90C3D1 | TO-247AD Transistor: IXYH40N90C3D1, 900V, 90A | Ixys Integrated Circuits Division | Active | 3~7 Days | 5,178 | |
| IRG4PH50S-EPBF | Enhanced Performance IGBT Chip - 1200V 57A 200W | Infineon Technologies | 3~7 Days | 4,236 | ||
| IXGH16N170A | Reach out for more information | Ixys Integrated Circuits Division | Active | 3~7 Days | 6,717 | |
| SF2005PT | ROHS Switching Diode 300V 1.5V@20A 35ns TO-247AD 20A | Taiwan Semiconductor Corporation | 3~7 Days | 2,872 | ||
| IXGH6N170A | High-power 6A 1.7kV NPT IGBTs | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 7,417 | |
| IRGP4660D-EPBF | Details of IRGP4660D-EPBF | Infineon Technologies | 3~7 Days | 3,973 | ||
| IRGP4068D-EPBF | The IRGP4068D-EPBF is an insulated gate bipolar transistor (IGBT) chip designed for use in power electronics | Infineon Technologies | Obsolete | 3~7 Days | 5,415 | |
| SF3004PT | Rectifiers 35ns, 30A, 200V, Super Fast Recovery Rectifier | Taiwan Semiconductor Corporation | ACTIVE | 3~7 Days | 7,934 | |
| DPG60C400HB | Diodes - General Purpose, Power, Switching 60 Amps 400V | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 9,950 | |
| IXXH150N60C3 | IGBT Transistors IGBT XPT-GENX3 | Ixys Integrated Circuits Division | 3~7 Days | 3,462 |
Additional Package/Case