TO264-3 Related Product
Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
---|---|---|---|---|---|---|
FGL40N120ANDTU | Trans IGBT Chip N-CH 1200V 64A 500W 3-Pin(3+Tab) TO-264 Tube | Onsemi | Obsolete | 3~7 Days | 6,187 | |
MJL4281AG | The MJL4281AG is a NPN complementary silicon power transistor | Onsemi | ACTIVE | 3~7 Days | 5,208 | |
MJL21195G | Bipolar Transistors - BJT | Onsemi | ACTIVE | 3~7 Days | 6,260 | |
MJL21194G | Trans GP BJT NPN 250V 16A 200000mW 3-Pin(3+Tab) TO-264 Tube | Onsemi | 3~7 Days | 5,286 | ||
FJL4315OTU | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | Onsemi | 3~7 Days | 2,645 | ||
FJL4215OTU | Bipolar Transistors - BJT PNP Si Transistor Epitaxial | Onsemi | 3~7 Days | 3,448 | ||
APT5010LVRG | MOSFET FG, MOSFET, 500V, TO-264, RoHS | Microchip Technology | ACTIVE | 3~7 Days | 7,059 | |
APT100S20LCTG | Schottky Diodes & Rectifiers FG, SCHOTTKY, 200V, TO-264, RoHS | Microchip Technology | 3~7 Days | 5,442 | ||
RM50HG-12S | Rectifier Diode, 1 Phase, 1 Element, 50A, 600V V(RRM), Silicon | Powerex Inc. | OBSOLETE | 3~7 Days | 8,973 | |
RM25HG-24S | Rectifier Diode, 1 Phase, 1 Element, 25A, 1200V V(RRM), Silicon | Powerex Inc. | OBSOLETE | 3~7 Days | 5,742 | |
MTY30N50E | The MTY30N50E MOSFETs device is ROHS certified | Onsemi | ACTIVE | 3~7 Days | 6,953 | |
IXFK320N17T2 | Product IXFK320N17T2: This is a high-power N-channel MOSFET capable of handling up to 320A current at 170V, featuring a TO-264 package | Ixys Integrated Circuits Division | 3~7 Days | 2,740 | ||
IXTK22N100L | 000V power MOSFET with N-channel configuration | Ixys Integrated Circuits Division | Active | 3~7 Days | 7,903 | |
IXTK140N20P | TO-264 MOSFETs RoHS | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 7,916 | |
IXTK170N10P | High-power MOSFET rated at 170 Amps, 100V, with low 0.009 Ohm Rds | Ixys Integrated Circuits Division | 3~7 Days | 5,470 | ||
FJL6820TU | Transistor with NPN bipolar junction technology | Onsemi | 3~7 Days | 3,988 | ||
IXGK120N120A3 | 3-pin (3+Tab) design for reliable and efficient operation | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 5,204 | |
IXXK100N60B3H1 | Through Hole TO-264 package for IXXK100N60B3H1 Series | Ixys Integrated Circuits Division | 3~7 Days | 6,069 | ||
IXSK80N60B | TO-264AA Packaged N-Channel IGBT Chip: 600V, 180A, 500mW | Ixys Integrated Circuits Division | 3~7 Days | 5,080 | ||
MTY25N60E | MTY25N60E MOSFETs certified for ROHS compliance | Onsemi | ACTIVE | 3~7 Days | 6,907 | |
IXXK300N60B3 | IXXK300N60B3 - IGBT Transistors XPT: These are high-performance IGBT transistors capable of handling up to 600V and 300A | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 6,505 | |
NTY100N10 | Si N-CHANNEL POWER MOSFET, TO-264, 123A | Onsemi | OBSOLETE | 3~7 Days | 7,979 | |
APT10045LFLLG | Discrete Semiconductor Modules FG, FREDFET,1000V, TO-264, RoHS | Microchip Technology | 3~7 Days | 3,757 | ||
APT60M75L2LLG | MOSFET FG, MOSFET, 600V, TO-264 MAX, RoHS | Microchip Technology | 3~7 Days | 3,049 | ||
IXGK55N120A3H1 | Trans IGBT Chip N-CH 1200V 125A 460W 3-Pin(3+Tab) TO-264 | Ixys Integrated Circuits Division | 3~7 Days | 6,299 | ||
APT6010LLLG | MOSFET FG, MOSFET, 600V, TO-264, RoHS | Microchip Technology | 3~7 Days | 7,986 | ||
APT64GA90LD30 | IGBT Transistors IGBT PT MOS 8 Combi 900 V 64 A TO-264 | Microchip Technology | ACTIVE | 3~7 Days | 8,971 | |
APT50GN120L2DQ2G | IGBT Transistors IGBT Fieldstop Low Frequency Combi 1200 V 50 A TO-264 MAX | Microchip Technology | ACTIVE | 3~7 Days | 5,937 | |
DSEC120-12AK | Rectifiers 120 Amps 1200V | Ixys Integrated Circuits Division | 3~7 Days | 4,032 |
Additional Package/Case