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TSOP-48 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| W29N01HVSINA TR | W29N01HVSINA TR, 1Gb 3.3V NAND flash storage | Winbond Electronics | ACTIVE | 3~7 Days | 7,394 | |
| AS29CF800B-55TIN | Industrial-grade parallel NOR flash with x architectur | Alliance Memory | 3~7 Days | 6,386 | ||
| MT29F1G08ABAEAWP-AITX:E TR | High-Performance NAND Flash Memory: Perfect for Embedded Systems - MT29F1G08ABAEAWP-AITX:E TR | Micron Technology | 3~7 Days | 4,023 | ||
| S29JL032J70TFA020 | 3V Flash Memory with 32M Capacity for Simultaneous Read and Write Operations | Infineon Technologies | ACTIVE | 3~7 Days | 9,731 | |
| S29JL032J70TFI313 | Ultra-fast, low-power M-bit parallel NOR flash memory with advanced read-write capabilitie | Infineon | 3~7 Days | 3,262 | ||
| W29N02GVSIAF | AEC-Q100 compliant | Winbond | NRND | 3~7 Days | 9,402 | |
| MT29F2G08ABAEAWP-AATX:E TR | Robust and efficient NAND flash storage technolog | Micron Technology | 3~7 Days | 5,491 | ||
| S29AL008J70TFN023 | High-density NOR flash memory for parallel data transfer applications | Infineon Technologies Ag | 3~7 Days | 5,097 | ||
| IS62WV102416GBLL-45TLI | High-performance RAM solution for modern application | Issi | 3~7 Days | 6,910 | ||
| JR28F064M29EWBA | 16-bit data bus width | Micron Technology | OBSOLETE | 3~7 Days | 6,459 | |
| MT29F2G16ABAGAWP-AAT:G | Advanced NAND flash memory technology for high-capacity data storage and processin | Micron Technology | 3~7 Days | 6,073 | ||
| S29JL032J70TFI423 | JL-J Series provides high-performance and reliability for a wide range of embedded systems and devices | Infineon | 3~7 Days | 4,016 | ||
| MT29F2G08ABAGAWP-IT:G TR | This bit NAND flash chip provides reliable and fast storage for industrial-grade applications that require secure data preservation and acces | Micron Technology | 3~7 Days | 2,805 | ||
| MT29F1G08ABAEAWP-AATX:E TR | High-performance memory solution for embedded systems, compatible with industrial temperature range | Micron Technology | 3~7 Days | 6,131 | ||
| MT29F1G08ABADAWP-IT:D TR | Low-power, low-latency memory device suitable for a wide range of industrial control and automation application | Micron Technology | 3~7 Days | 6,973 | ||
| MT29F1G08ABAEAWP:E TR | Ultra-High-Density Flash Memory for Data Centers and Enterprise Applications | Micron Technology | 3~7 Days | 6,328 | ||
| TC58BVG1S3HTA00 | EEPROM 3.3V, 2 Gbit CMOS NAND EEPROM | Kioxia America, Inc. | ACTIVE | 3~7 Days | 5,046 | |
| IS34ML04G081-TLI | IS34ML04G081-TLI NAND Flash product description | ISSI, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 9,295 | |
| S29GL064N90TAI030 | Robust NOR FLASH memory module for TFSOP-48 interface | Infineon Technologies Ag | 3~7 Days | 6,148 | ||
| S34MS01G200TFI900 | 1Gb NAND Flash memory module running at 1.8 volts, with a latency of 45 nanoseconds | Cypress Semiconductor Corp | ACTIVE | 3~7 Days | 7,821 | |
| TC58NVG0S3ETA00 | 43nm SLC NAND Flash memory module capable of storing 1Gb of data, designed to operate at a voltage of 3.3V | Kioxia America, Inc. | ACTIVE | 3~7 Days | 5,515 | |
| TC58NVG1S3ETA00 | EEPROM NAND Flash module ideal for industrial applications | Kioxia America, Inc. | OBSOLETE | 3~7 Days | 8,248 | |
| TC58BVG1S3HTAI0 | High temperature resistant NAND flash memory | Kioxia America, Inc. | ACTIVE | 3~7 Days | 5,183 | |
| SST39VF1682-70-4C-EK | Compact PDSO package provides a reliable storage solution with low power consumption and high spee | Microchip | 3~7 Days | 3,772 | ||
| S34ML08G101TFI200 | SLC NAND Flash Parallel 3V/3.3V 8G-bit 1G x 8 48-Pin TSOP-I Tray | Infineon Technologies | OBSOLETE | 3~7 Days | 5,179 | |
| S34ML04G200TFI003 | Parallel 3V/3.3V 48-Pin TSOP-I | Skyhigh Memory | OBSOLETE | 3~7 Days | 7,834 | |
| S29JL032H90TFI320 | 90ns access time | infineon | OBSOLETE | 3~7 Days | 9,018 | |
| S29JL032J60TFI320 | Robust TFSOP-48 package design ensures durability and performance in harsh operating environments | Infineon | 3~7 Days | 4,603 | ||
| S29JL032H70TFI310 | 9JL032H70TFI310 Flash memory IC | infineon | OBSOLETE | 3~7 Days | 6,715 | |
| S34ML04G100TFI003 | 512MX8 flash memory chip in a TSOP1-48 package with PDSO48 form factor, offering a fast access time of 25 nanoseconds | Infineon Technologies | OBSOLETE | 3~7 Days | 7,053 | |
| MT29F2G08ABAEAWP:E TR | SLC NAND Flash 2G 256MX8 TSOP | Micron Technology | ACTIVE | 3~7 Days | 8,189 | |
| NAND01GW3B2AN6 | Parallel 3V/3.3V Interface | stmicroelectronics | OBSOLETE | 3~7 Days | 9,787 | |
| M29F800FT5AN6E2 | NOR Flash Parallel 5V 8M-bit Automotive AEC-Q100 | Micron Technology Inc. | OBSOLETE | 3~7 Days | 6,633 | |
| M29W640GB7AN6E | Advanced flash storage solution with reliable data retention capabilitie | Alliance Memory | 3~7 Days | 5,585 | ||
| M29W160EB90N6 | Product Name: M29W160EB90N6 | Micron Technology | 3~7 Days | 7,104 | ||
| M29W320EB70N6F | Supplied in tape and reel packaging format for convenience | stmicroelectronics | OBSOLETE | 3~7 Days | 7,762 | |
| M29W320DB70N6F | Offers 70ns Access Time for High-Speed Performance | Stmicroelectronics | OBSOLETE | 3~7 Days | 6,301 | |
| M29W320DB70N6T | Compact and powerful storage solution for embedded system | Micron Technology | 3~7 Days | 6,607 | ||
| M29W320DT70N6 | Ideal for embedded systems, automotive electronics, and industrial control applications requiring secure and efficient data management | Micron Technology | 3~7 Days | 4,638 | ||
| M29W160EB70N6F | NOR Flash STD FLASH 16 MEG | Micron Technology Inc. | OBSOLETE | 3~7 Days | 8,703 |
Additional Package/Case