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TSOP-I Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| MX29GL512FLT2I-10Q | High-speed NOR Flash memory device suitable for a wide range of applications requiring fast read/write speeds | Macronix International | 3~7 Days | 7,471 | ||
| K9F1G08U0C-PCB0 | I 48-Pin Package 1 Gigabit Capacity 3.3 Voltage Operation NAND Flash Memory with Parallel Interface | Samsung Electronics | 3~7 Days | 7,000 | ||
| W29N01GVSIAA | Model number: W29N01GVSIAA | Winbond | Active | 3~7 Days | 4,731 | |
| MX29LV320DBTI-70G | Suitable for various electronic devices | Macronix International | 3~7 Days | 7,117 | ||
| MX29GL320EBTI-70G | 70ns Access Time | Macronix International | 3~7 Days | 5,599 | ||
| MT29F8G08ABABAWP:B | Advanced SLC technology ensures reliable and fast storage solution for various application | Micron Technology | OBSOLETE | 3~7 Days | 6,587 | |
| MX29LV640EBTI-70G | MX29LV640EBTI-70G 48-Pin TSOP-I Package | Macronix | ACTIVE | 3~7 Days | 5,345 | |
| MX29F400CBTI-70G | 70 nanosecond access time | Macronix International | ACTIVE | 3~7 Days | 7,727 | |
| MT29F2G08ABAEAWP-IT:E | Reliable and secure non-volatile memory for data logging and recording need | Micron Technology | ACTIVE | 3~7 Days | 9,664 | |
| MT29F2G08ABAEAWP:E | Surface Mount MT29F2G08ABAEAWP Memory IC | Micron | ACTIVE | 3~7 Days | 6,461 | |
| MX30LF4G28AD-TI | Parallel SLC NAND flash memory with 4G-bit capacity | Macronix International | 3~7 Days | 4,359 | ||
| CY62157EV30LL-45ZXI | 12K x 16 configuration | Infineon Technologies | ACTIVE | 3~7 Days | 8,759 | |
| FM28V100-TG | F-RAM 1M (128Kx8) 2.2-3.6V F-RAM | Infineon Technologies | ACTIVE | 3~7 Days | 9,565 | |
| MX29LV160DBTI-70G | PDSO48 flash memory chip with 1 megabit x 16 configuration and 70ns access time | Macronix International | ACTIVE | 3~7 Days | 5,836 | |
| MX29GL128FLT2I-90G | High-speed data access | Macronix International | NRND | 3~7 Days | 9,072 | |
| MT29F1G08ABADAWP-IT:D | NAND SLC 1Gb Memory | Micron Technology | OBSOLETE | 3~7 Days | 7,865 | |
| MX29GL256FDT2I-11G | TSOP56 256Mb Parallel Flash Memory IC | Macronix International | ACTIVE | 3~7 Days | 7,759 | |
| RMLV1616AGSA-5S2#AA0 | TSOP48 SRAM Chip with 55NS Speed | Renesas | ACTIVE | 3~7 Days | 9,974 | |
| CY62177G30-55ZXI | SRAM Chip Async Single 3V/3.3V 32M-bit 4M/2M x 8/16-bit 55ns 48-Pin TSOP-I Bulk | Infineon Technologies | ACTIVE | 3~7 Days | 5,271 | |
| AT28C010E-15TU-T | EEPROM 150NS, TSOP, IND TEMP, GREEN | Microchip Technology | ACTIVE | 3~7 Days | 5,996 | |
| AT28C010-12TU | EEPROM Parallel 1M-bit 128K x 8 5V 32-Pin TSOP-I Tray | Microchip Technology | ACTIVE | 3~7 Days | 6,981 | |
| SST39VF801C-70-4I-EKE | NOR Flash 2.7 to 3.6V 8Mbit Multi-Purpose Flash | Microchip Technology | ACTIVE | 3~7 Days | 8,760 | |
| SST39LF802C-55-4C-EKE-T | Flash Parallel 3.3V 8M-bit 512K x 16 55ns 48-Pin TSOP-I T/R | Microchip Technology | ACTIVE | 3~7 Days | 6,877 | |
| SST39LF801C-55-4C-EKE-T | Flash Parallel 3.3V 8M-bit 512K x 16 55ns 48-Pin TSOP-I T/R | Microchip Technology | ACTIVE | 3~7 Days | 9,147 | |
| SST39VF402C-70-4I-EKE-T | 4Mb 2.7-3.6V Parallel Flash. | Microchip Technology | ACTIVE | 3~7 Days | 8,221 | |
| SST39VF401C-70-4C-EKE-T | 4Mb 2.7-3.6V Parallel Flash. | Microchip Technology | ACTIVE | 3~7 Days | 5,076 | |
| SST39VF401C-70-4I-EKE-T | 4Mb 2.7-3.6V Parallel Flash. | Microchip Technology | ACTIVE | 3~7 Days | 5,519 | |
| SST39LF401C-55-4C-EKE | 4Mb 3-3.6V Parallel Flash. | Microchip Technology | ACTIVE | 3~7 Days | 9,224 | |
| MT29F2G08ABAEAWP | High-density storage solution for embedded systems application | Micron | 3~7 Days | 2,503 | ||
| CY62167GN-45ZXIT | CY62167GN-45ZXIT: 16Mbit SRAM, TFSOP-48 package, conforms to ROHS standards, with voltage range 4.5V-5.5V | Infineon Technologies | NRND | 3~7 Days | 8,919 | |
| AT49BV4096A-90TI | PDSO48 Flash chip offering 256KX16 storage with 90ns access time | Microchip Technology | OBSOLETE | 3~7 Days | 6,403 | |
| TC58NVG2S3ETA00BBH | High-capacity NAND flash memory for reliable data storage | Toshiba | 3~7 Days | 5,106 | ||
| MT29F2G08AACWP:C | Packaged in a 48-Pin TSOP-I tray for easy installation and handling | Micron Technology | OBSOLETE | 3~7 Days | 6,778 | |
| MT29F16G08FAAWC:A | Compact 48-pin TSOP-I package for easy integration into electronic devices | Micron Technology | OBSOLETE | 3~7 Days | 7,709 | |
| K6X1008C2D-PF55000 | Ultra-fast 128K x 8 synchronous SRAM chip for high-speed processing (93 characters) | Samsung Electronics | 3~7 Days | 3,446 | ||
| IS61WV102416BLL-10TI | 10ns 48-Pin TSOP-I | Integrated Silicon Solution Inc | OBSOLETE | 3~7 Days | 6,148 | |
| K9WAG08U1D-SCB0000 | Reliable and durable data storage solution for industrial application | Samsung Electronics | 3~7 Days | 6,448 | ||
| CY62167GE30-45ZXIT | Single Asynchronous SRAM Memory Chip, 16 Megabits, Operating Voltage Range of 2 | Infineon Technologies | ACTIVE | 3~7 Days | 8,382 | |
| CY62138FV30LL-45ZXIT | Efficient 3V SRAM with 256K x 8 configuration | Infineon Technologies | ACTIVE | 3~7 Days | 9,440 | |
| CY14B116L-Z45XIT | CY14B116L-Z45XIT falls under the category of NVRAM Non Volatile SRAMs | Infineon Technologies | NRND | 3~7 Days | 6,404 |
Additional Package/Case