WDFN EP Related Product
Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
---|---|---|---|---|---|---|
FDMC6679AZ | MOSFET, P CH, 30V, 20A, MLP 3.3X3.3; Transistor Polarity:P Channel; Continuous Drain Current Id:-20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0086ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:41W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012) | Onsemi | NRND | 3~7 Days | 7,849 | |
NTTFS4821NTAG | Single N-Channel Power MOSFET 30V 57A 7mΩ, WDFN8 3.3x3.3, 0.65P, 1500-REEL | Onsemi | 3~7 Days | 6,283 | ||
FDMC7678 | N-Channel Power Trench MOSFET FDMC7678 | Onsemi | OBSOLETE | 3~7 Days | 8,957 | |
FDFM2P110 | Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -20 V, -3.5 A, 140 mΩ | Fairchild Semiconductor | ACTIVE | 3~7 Days | 6,523 | |
FDMC8026S | N-Channel PowerTrench® SyncFET™ 30V, 21A, 4.4mΩ | Onsemi | OBSOLETE | 3~7 Days | 8,237 | |
NTTFS6H850NTAG | MOSFET TRENCH 8 80V NFET | Onsemi | Active | 3~7 Days | 6,428 | |
NVTFS002N04CTAG | MOSFET 40V 2.4 mOhms 136A Single N-Channel | Onsemi | Active | 3~7 Days | 5,287 | |
NCP81085MTTXG | Dual MOSFET Gate Driver | Onsemi | NRND | 3~7 Days | 6,976 | |
FDMC86102LZ | N-Channel Shielded Gate Power Trench® MOSFET 100V, 22A, 24mΩ | Onsemi | ACTIVE | 3~7 Days | 9,303 | |
FDMC7680 | MOSFET, N CH, 30V, 18A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012) | Fairchild Semiconductor | ACTIVE | 3~7 Days | 9,442 | |
FDMC7672S | MOSFET, N CH, 30V, 18A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012) | Onsemi | ACTIVE | 3~7 Days | 7,771 | |
NVTFS5116PLWFTWG | MOSFET Pwr MOSFET 60V 14A 52mOhm SGL P-CH | Onsemi | Active | 3~7 Days | 9,774 | |
FDMC7200S | Dual N-Channel MOSFET Array, 30V, 23A/46A, 8-Pin Power | Onsemi | ACTIVE | 3~7 Days | 7,616 | |
FDMC0310AS | N-Channel PowerTrench® SyncFET™ 30V, 21A, 4.4mΩ | Onsemi | OBSOLETE | 3~7 Days | 6,908 | |
FDMB3800N | 8A maximum current | Onsemi | Active | 3~7 Days | 8,861 | |
FDMA905P | Single P-Channel PowerTrench® MOSFET -12V, -10A, 16mΩ, 3000-REEL | Onsemi | ACTIVE | 3~7 Days | 6,653 | |
FDMA8878 | Single N-Channel Power Trench® MOSFET 30V, 9.0A, 16mΩ | Onsemi | ACTIVE | 3~7 Days | 5,316 | |
FDMA86265P | MOSFET, P-CH, -150V, -1A, MICROFET-6; Transistor Polarity: P Channel; Continuous Drain Current Id: -1A; Drain Source Voltage Vds: -150V; On Resistance Rds(on): 0.86ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3.2V; Power Dissipation Pd: 2.4W; Transistor Case Style: MicroFET; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018) | Onsemi | ACTIVE | 3~7 Days | 9,713 | |
FDMA7672 | MOSFET 30V Single N-Channel PowerTrench MOSFET | Onsemi | ACTIVE | 3~7 Days | 9,712 | |
NTTFS5C466NLTAG | MOSFET AFSM T6 40V LL U8FL | Onsemi | Active | 3~7 Days | 8,780 | |
NTTFS115P10M5 | Power MOSFET, P Channel, -100V, -13 A, 120mΩ | Onsemi | ACTIVE | 3~7 Days | 6,863 | |
FDMA510PZ | Single P-Channel PowerTrench® MOSFET -20V, -7.8A, 30mΩ | Onsemi | ACTIVE | 3~7 Days | 8,649 | |
FDMA291P | MOSFET, P, MLP6; Transistor Polarity:P Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):42mohm; Rds(on) Test Voltage Vgs:-700mV; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-6.6A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:MLP-6; Power Dissipation Pd:2.4W; Power Dissipation Pd:2.4W; Pulse Current Idm:24A; Termination Type:SMD; Voltage Vds:-20V; Voltage Vds Typ:-20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1V | Onsemi | ACTIVE | 3~7 Days | 6,878 | |
FDMA1032CZ | This device is designed specifically as a single package solution for a DC/DC 'Switching' MOSFET in cellular handset and other ultra-portable applications. It features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching applications. | Onsemi | ACTIVE | 3~7 Days | 7,888 | |
FDMA1029PZ | ON SEMICONDUCTOR - FDMA1029PZ - Dual MOSFET, Dual P Channel, 3.1 A, -20 V, 0.06 ohm, -1 V, 1 V | Onsemi | ACTIVE | 3~7 Days | 8,888 | |
NVTFS6H888NTAG | MOSFET T8 80V U8FL | Onsemi | Active | 3~7 Days | 7,324 | |
FDMQ8205 | Ideal diode with 400muA and 57V Max | Onsemi | Active | 3~7 Days | 6,478 | |
FAN8811TMPX | This Gate Driver offers advanced features for driving power MOSFETs in a compact design | Onsemi | Active | 3~7 Days | 5,591 | |
NCV6323FELMTW12TBG | Switching Voltage Regulators Automotive, Buck converter, Synchronous, PWM, Fixed Output Voltage DC to DC converter, up to 1.6 A DC, Wettable flank DFN8, 2x2 mm (0.8 mm thickness), 0.5 mm pitch package 1.2 V Fixed output voltage | Onsemi | Active | 3~7 Days | 9,305 | |
FDFMA2P029Z | This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with very low onstate resistance and an independently connected low forward voltage schottky diode allows for minimum conduction losses.The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. | Onsemi | OBSOLETE | 3~7 Days | 8,767 | |
NVTFS024N06CTAG | MOSFET Power MOSFET, Single, N-Channel, u8FL, | Onsemi | Active | 3~7 Days | 8,936 | |
NVTFS008N04CTAG | MOSFET T6 40V SG NCH U8FL | Onsemi | Active | 3~7 Days | 8,297 | |
NCV6323FELMTW10TBG | Switching Voltage Regulators Automotive, Buck converter, Synchronous, PWM, Fixed Output Voltage DC to DC converter, up to 1.6 A DC, Wettable flank DFN8, 2x2 mm (0.8 mm thickness), 0.5 mm pitch package 1.0 V Fixed output voltage | Onsemi | Active | 3~7 Days | 8,409 | |
FDMC86262P | MOSFET, P-CH, -150V, -8.4A, 40W, POWER33; Transistor Polarity: P Channel; Continuous Drain Current Id: -8.4A; Drain Source Voltage Vds: -150V; On Resistance Rds(on): 0.241ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.9V; Power Dissipation Pd: 40W; Transistor Case Style: Power 33; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018) | Onsemi | ACTIVE | 3~7 Days | 5,704 | |
FDMC86240 | N-channel Silicon MOSFET, 150V, 4.6A, 8-pin WDFN EP package, Tape and Reel | Onsemi | ACTIVE | 3~7 Days | 6,928 | |
NVTFS6H888NWFTAG | MOSFET T8 80V U8FL | Onsemi | Active | 3~7 Days | 8,388 | |
NVTFS6H854NWFTAG | MOSFET TRENCH 8 80V NFET | Onsemi | Active | 3~7 Days | 9,158 | |
NVTFS6H850NWFTAG | MOSFET TRENCH 8 80V NFET | Onsemi | Active | 3~7 Days | 9,782 | |
NVTFS5124PLTWG | MOSFET Single P-Channel Power MOSFET -60V, -8A, 260mohm | Onsemi | Active | 3~7 Days | 9,141 | |
SST26WF016BT-104I/MF | NOR Flash 16Mb Flash Memory 1.8V SQI | Microchip Technology | ACTIVE | 3~7 Days | 9,347 |
Additional Package/Case