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1MBH60-090
N-channel Insulated Gate Bipolar Transistor (IGBT) with a maximum collector current of 60A and a collector-emitter breakdown voltage of 900V
1MBH60-090
N-channel Insulated Gate Bipolar Transistor (IGBT) with a maximum collector current of 60A and a collector-emitter breakdown voltage of 900V
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Service & Packaging
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1MBH60-090 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The 1MBH60-090 is a silicon carbide Schottky diode module by ROHM Semiconductor. It features a forward current rating of 60A and a reverse voltage rating of 900V, making it suitable for high power and high voltage applications. This module utilizes silicon carbide (SiC) technology, which offers superior switching performance and efficiency compared to traditional silicon diodes. The SiC material allows for lower forward voltage drop and faster switching speeds, reducing power loss and improving overall system efficiency.The 1MBH60-090 module is designed for use in applications such as power supplies, motor drives, renewable energy systems, and electric vehicles. Its compact and robust construction makes it easy to integrate into existing systems and ensures reliable operation in demanding environments.In addition to its high current and voltage ratings, the 1MBH60-090 module also offers low leakage current, high thermal conductivity, and high temperature operation capabilities. These features make it a versatile and reliable choice for high power applications that require long-term performance and reliability.
Key Features
- 1MBH60-090 is an Insulated Gate Bipolar Transistor (IGBT)
- It has a voltage rating of 900V and a current rating of 60A
- High thermal conductivity for efficient heat dissipation
- Low saturation voltage for improved performance
- Fast switching speed for high frequency applications
- Compact size and lightweight design
Application
- AC motor control
- Power supplies
- Industrial inverters
- Solar inverters
- Welding equipment
- UPS systems
- Renewable energy systems
- High-frequency switching applications
- Motor drives
- Power factor correction
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Part Life Cycle Code | Obsolete | Reach Compliance Code | |
| ECCN Code | EAR99 | Additional Feature ! | HIGH SWITCHING SPEED, LOW SATURATION VOLTAGE |
| Collector Current-Max (IC) | 60 A | Collector-Emitter Voltage-Max | 900 V |
| Configuration | SINGLE | Gate-Emitter Voltage-Max | 20 V |
| JESD-30 Code | R-PSFM-T3 | Number of Elements | 1 |
| Number of Terminals | 3 | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 260 W |
| Qualification Status ! | Not Qualified | Surface Mount ! | NO |
| Terminal Form ! | THROUGH-HOLE | Terminal Position | SINGLE |
| Transistor Application | POWER CONTROL | Transistor Element Material | SILICON |
| VCEsat-Max | 3.2 V |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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