2N1486

Description: Bipolar Transistors - BJT Power BJT (Product 2N1486)
5,495 Effective Inventory

2N1486

Effective Inventory5,495

Description: Bipolar Transistors - BJT Power BJT (Product 2N1486)

  • Manufacturer Part # : 2N1486

  • Package/Case: TO-8-3

  • Part Status : Active

  • Brand: Microchip Technology

  • Product Categories : Single Bipolar Transistors

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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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2N1486 DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
1 $138.730 $138.73
200 $55.355 $11,071.00
500 $53.504 $26,752.00
1000 $52.591 $52,591.00

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

Rapid Quote

Please submit RFQ for 2N1486 or email to us: Email: [email protected], we will contact you in 12 hours.

Details

The 2N1486 is a bipolar NPN transistor with a maximum voltage rating of 55V and a maximum current rating of 3A. It is housed in a TO-8 metal can package, which provides efficient heat dissipation and mechanical protection. This transistor is commonly used in various electronic circuits for amplification, switching, and voltage regulation. It has a high current-gain bandwidth product, making it suitable for high-frequency applications such as radio frequency amplifiers. The 2N1486 has three terminals: the emitter, base, and collector. The emitter is the terminal through which current flows out of the transistor. The base is the control terminal that regulates the flow of current between the emitter and collector. The collector is the terminal through which current enters the transistor. When biased correctly, the 2N1486 allows a small current at the base terminal to control a much larger current flowing between the emitter and collector terminals. This amplification property makes it a vital component in audio amplifiers, power supplies, and signal processing circuits. In conclusion, the 2N1486 is a versatile NPN transistor with a high voltage and current rating, making it suitable for a wide range of applications in the field of electronics

Key Features

  • NPN silicon transistor
  • High power output
  • Low noise and distortion
  • Wide frequency range
  • Designed for use in audio amplifier and driver applications
  • Good thermal stability
  • TO-5 metal can package
  • Complementary PNP type available (2N1485)

Application

  • RF power amplification in industrial and military communication systems
  • High-frequency amplification in radar systems
  • Amateur radio applications
  • Satellite communication systems
  • Wireless data transmission systems
  • Frequency modulation (FM) and amplitude modulation (AM) broadcasting systems
  • Signal booster in electronic devices
  • Power amplification in wireless microphone systems

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Microchip Product Category ! Bipolar Transistors - BJT
RoHS N Mounting Style Through Hole
Package / Case TO-8-3 Transistor Polarity NPN
Configuration Single Collector- Emitter Voltage VCEO Max 55 V
Collector- Base Voltage VCBO 100 V Emitter- Base Voltage VEBO 12 V
Collector-Emitter Saturation Voltage 750 mV Maximum DC Collector Current 3 A
Pd - Power Dissipation 1.75 W Gain Bandwidth Product fT -
Minimum Operating Temperature - 65 C Maximum Operating Temperature ! + 200 C
Brand Microchip Technology DC Collector/Base Gain hfe Min 35
DC Current Gain hFE Max 100 Product Type ! BJTs - Bipolar Transistors
Factory Pack Quantity 1 Subcategory Transistors
Technology Si Unit Weight 1.661227 oz

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