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2N5769
NPN Transistor for Switching Circuit
2N5769
NPN Transistor for Switching Circuit
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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2N5769 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The 2N5769 is a silicon NPN transistor designed for low power medium speed switching applications. It features a maximum collector-base voltage of 100 volts, a maximum collector-emitter voltage of 80 volts, and a maximum emitter-base voltage of 5 volts. The transistor has a maximum collector current of 1 ampere and a power dissipation of 500 milliwatts.The 2N5769 has a transition frequency of 100 megahertz and a typical hFE (DC current gain) of 40 to 100. It is housed in a TO-39 package with three leads and has a total power dissipation of 500 milliwatts. The maximum junction temperature of the transistor is 200 degrees Celsius.This transistor is ideally suited for applications in audio amplification, signal processing, and general switching purposes. Its low power consumption and high transition frequency make it suitable for medium-speed switching applications. The 2N5769 offers reliable performance and is commonly used in a variety of electronic circuits.In summary, the 2N5769 is a versatile NPN transistor with a maximum collector current of 1 ampere, a transition frequency of 100 megahertz, and a power dissipation of 500 milliwatts. Its compact TO-39 package and wide range of applications make it a popular choice among hobbyists and professionals alike
Key Features
- Low power silicon NPN transistor
- Designed for general purpose amplifier and switching applications
- Features high current, low voltage, and low frequency
- TO-92 package for easy mounting and heat dissipation
- Can handle continuous collector current of 100mA
- Available in bulk or tape and reel packaging options
Application
- Industrial automation
- RF amplifiers
- RF transmitters
- Signal processing
- Broadcasting equipment
- Telecommunication systems
- Radar systems
- Amateur radio equipment
- Test and measurement instruments
- Satellite communication systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Part Life Cycle Code | Obsolete | Reach Compliance Code | |
| ECCN Code | EAR99 | Date Of Intro | 2017-03-17 |
| Collector Current-Max (IC) | 0.2 A | Collector-Emitter Voltage-Max | 15 V |
| Configuration | SINGLE | DC Current Gain-Min (hFE) | 20 |
| JEDEC-95 Code | TO-92 | JESD-30 Code | O-PBCY-T3 |
| Number of Elements | 1 | Number of Terminals | 3 |
| Package Body Material | PLASTIC/EPOXY | Package Shape | ROUND |
| Package Style | CYLINDRICAL | Polarity/Channel Type | NPN |
| Surface Mount ! | NO | Terminal Form ! | THROUGH-HOLE |
| Terminal Position | BOTTOM | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON | Turn-off Time-Max (toff) | 18 ns |
| Turn-on Time-Max (ton) | 12 ns | Manufacturer | onsemi |
| Product Category ! | Bipolar Transistors - BJT | RoHS | Details |
| Mounting Style | Through Hole | Package / Case | TO-92-3 |
| Transistor Polarity | NPN | Collector- Emitter Voltage VCEO Max | 15 V |
| Collector- Base Voltage VCBO | 40 V | Emitter- Base Voltage VEBO | 4.5 V |
| Collector-Emitter Saturation Voltage | 500 mV | Maximum DC Collector Current | 200 mA |
| Pd - Power Dissipation | 350 mW | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature ! | + 150 C | Series | 2N5769 |
| Brand | onsemi / Fairchild | Continuous Collector Current | 200 mA |
| DC Collector/Base Gain hfe Min | 40 | DC Current Gain hFE Max | 120 |
| Height | 5.33 mm | Length | 5.2 mm |
| Product Type ! | BJTs - Bipolar Transistors | Factory Pack Quantity | 2000 |
| Subcategory | Transistors | Technology | Si |
| Width | 4.19 mm | Unit Weight | 0.007090 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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