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2N7002E
MOSFET N-CH 60V 240MA SOT23-3
2N7002E
MOSFET N-CH 60V 240MA SOT23-3
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Manufacturer Part # : 2N7002E
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Package/Case: SOT-23
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Brand: VISHAY SILICONIX
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Product Categories : Single FETs, MOSFETs
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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2N7002E DataSheet
Pricing (USD)
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 20 | $0.021 | $0.42 |
| 200 | $0.017 | $3.40 |
| 600 | $0.016 | $9.60 |
| 3000 | $0.014 | $42.00 |
| 9000 | $0.013 | $117.00 |
| 21000 | $0.012 | $252.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
The 2N7002E is an N-channel MOSFET designed for small-signal applications and low-voltage electronic switching. It is commonly used in various electronic circuits for signal amplification and switching purposes.
Key Features
- N-Channel Enhancement Mode: The 2N7002E operates in the enhancement mode, meaning it enhances the conductivity of the channel when a positive voltage is applied to the gate.
- Low Threshold Voltage: The MOSFET has a low threshold voltage, making it suitable for low-voltage electronic applications.
- Small Signal Amplification: Commonly used for small-signal amplification and switching in various electronic circuits.
- Low On-Resistance: While designed for small-signal applications, the 2N7002E still provides low on-resistance for efficient switching.
- Compact SOT-23 Package: Typically available in a compact SOT-23 package, making it suitable for space-constrained designs.
Application
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Switching Circuits: Used in electronic switching circuits for its small-signal characteristics and low threshold voltage.
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Signal Amplification: Commonly employed for small-signal amplification in audio and communication circuits.
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Low-Voltage Applications: Suitable for low-voltage applications where a compact and efficient N-channel MOSFET is required.
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Portable Devices: Found in various portable electronic devices due to its small size and low-voltage capabilities.
Equivalent Parts
- 2N7002
- 2N7002LT1G
Replaceable Parts
- BS170
- NDS7002A
- DMN7002LW
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Name | 2N7002E | Product Type ! | N-Channel MOSFET |
| Manufacturer | ON Semiconductor | Drain-Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 115mA | Gate-Source Voltage (Vgs) | ±20V |
| Threshold Voltage (Vgs, th) | 1V to 2V | On-State Resistance (Rds(on)) | 5 ohms |
| Power Dissipation (Pd) | 360mW | Operating Temperature Range ! | -55°C to +150°C |
| Package / Case | SOT-23 |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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