2SA1016K
2SA1016K Transistor, a Single Element Device for Small Signal Applications2SA1016K
2SA1016K Transistor, a Single Element Device for Small Signal Applications
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Service & Packaging
Service & Packaging
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2SA1016K DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The 2SA1016K is a high voltage PNP transistor commonly used in audio amplification and switching applications. It is designed for high-voltage applications with a maximum collector-emitter voltage of 160 volts and a maximum collector current of 1 amp. The transistor is housed in a TO-220 package, which provides good thermal conductivity and heat dissipation.The 2SA1016K has a low saturation voltage and high current gain, making it suitable for use in high-power amplifier circuits. It also has a low noise figure, which is important for audio applications where signal fidelity is crucial.With a transition frequency of 100 MHz, the 2SA1016K can also be used in high-frequency applications such as RF amplifiers and oscillators. The transistor has a power dissipation rating of 1.2 watts, allowing it to handle moderate power levels.
Key Features
- Low noise amplification
- High hFE and low VCE saturation voltage
- Complementary PNP transistor to 2SC2335K
- Designed for use in audio amplifier circuits
- TO-220 package for easy mounting
- High current and power dissipation capabilities
Application
- Audio amplification circuits
- Power supply regulator circuits
- Switching applications
- Voltage amplifier applications
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Part Life Cycle Code | Obsolete | Part Package Code | TO-92 |
Pin Count ! | 3 | Reach Compliance Code | |
ECCN Code | EAR99 | Additional Feature ! | LOW NOISE |
Collector Current-Max (IC) | 0.05 A | Collector-Emitter Voltage-Max | 120 V |
Configuration | SINGLE | DC Current Gain-Min (hFE) | 160 |
JEDEC-95 Code | TO-92 | JESD-30 Code | O-PBCY-T3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Temperature-Max | 125 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | ROUND | Package Style | CYLINDRICAL |
Polarity/Channel Type | PNP | Power Dissipation-Max (Abs) | 0.4 W |
Qualification Status ! | Not Qualified | Surface Mount ! | NO |
Terminal Form ! | THROUGH-HOLE | Terminal Position | BOTTOM |
Transistor Application | AMPLIFIER | Transistor Element Material | SILICON |
Transition Frequency-Nom (fT) | 110 MHz | VCEsat-Max | 0.5 V |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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