2SC2590
Power Bipolar Transistor, NPN, 0.5A I(C), 120V V(BR)CEO, Silicon, TO-126B-A12SC2590
Power Bipolar Transistor, NPN, 0.5A I(C), 120V V(BR)CEO, Silicon, TO-126B-A1
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Manufacturer Part # : 2SC2590
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Package/Case: TO-225AA
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Part Status : OBSOLETE
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Brand: Panasonic Electronic Components
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Product Categories : Single Bipolar Transistors
Quality Assurance
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
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About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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2SC2590 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The 2SC2590 is an NPN bipolar junction transistor with a maximum voltage rating of 120V and a maximum current rating of 500mA. It operates at a frequency of 200MHz and has a power dissipation of 1.2W. The transistor is designed to be used in through-hole mounting with a TO-126B-A1 package. The 2SC2590 is commonly used in various electronic applications such as amplifiers, oscillators, and radio frequency circuits. It is known for its high frequency capability, making it suitable for applications where fast switching speeds are required. The TO-126B-A1 package allows for easy installation on circuit boards, providing a secure and reliable connection. It is important to follow the recommended operating conditions and voltage limits to ensure the longevity and performance of the transistor.
Key Features
- High frequency NPN transistor
- Low noise figure
- High gain
- Low distortion
- Designed for use in RF and IF amplifier applications
- Available in a TO-92 package
Application
- Cellular signal boosters
- Amateur radio equipment
- Industrial RF applications
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Package | Bulk | Product Status | Obsolete |
Transistor Type | NPN | Current - Collector (Ic) (Max) | 500 mA |
Voltage - Collector Emitter Breakdown (Max) | 120 V | Vce Saturation (Max) @ Ib, Ic | 1V @ 30mA, 300mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 150mA, 10V | Power - Max | 1.2 W |
Frequency - Transition | 200MHz | Operating Temperature ! | 150°C (TJ) |
Mounting Type | Through Hole | Package / Case | TO-225AA, TO-126-3 |
Supplier Device Package | TO-126B-A1 | Base Product Number | 2SC259 |
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