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2SC2859
2SC2859 is a high-frequency transistor commonly used in RF amplifiers and oscillators.
2SC2859
2SC2859 is a high-frequency transistor commonly used in RF amplifiers and oscillators.
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2SC2859 DataSheet
Pricing (USD)
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 20 | $0.033 | $0.66 |
| 200 | $0.026 | $5.20 |
| 600 | $0.022 | $13.20 |
| 3000 | $0.020 | $60.00 |
| 9000 | $0.018 | $162.00 |
| 21000 | $0.018 | $378.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
The 2SC2859 is a high-frequency, low-noise silicon NPN transistor commonly used in RF amplification and low-noise applications. It is designed for use in portable radios, wireless communication devices, and other high-frequency electronic circuits.The transistor has a maximum voltage rating of 20V and a maximum current rating of 50mA. It has a power dissipation of 200mW and a transition frequency (fT) of 2.5GHz, making it suitable for high-frequency applications.The 2SC2859 has a low noise figure, making it ideal for use in RF amplifiers where low noise is critical. It also features a small package size, which makes it suitable for compact circuit designs.The transistor has a high gain value, typically around 20dB, which allows for efficient signal amplification. It also has a low saturation voltage and high breakdown voltage, ensuring stable and reliable performance in electronic circuits.
Key Features
- Low frequency power amplifier transistor
- High voltage, high current capability
- Complementary to 2SA1108
- Low collector-emitter saturation voltage
- High transition frequency
- Excellent linearity and uniformity
- High reliability and rugged design
- Suitable for use in audio amplifiers and power regulators
Application
- RF power amplifiers
- Low noise amplifiers
- Communication systems
- Radar systems
- Satellite communication equipment
- Telecommunication devices
- Signal processing
- Cellular base stations
- Microwave transmitters
- Wireless networking devices
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Part Life Cycle Code | Active | Reach Compliance Code | |
| ECCN Code | EAR99 | Collector Current-Max (IC) | 0.5 A |
| Collector-Emitter Voltage-Max | 30 V | Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 25 | JESD-30 Code | R-PDSO-G3 |
| Number of Elements | 1 | Number of Terminals | 3 |
| Operating Temperature-Max | 125 °C | Operating Temperature-Min | -55 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | NPN | Surface Mount ! | YES |
| Terminal Form ! | GULL WING | Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON | Transition Frequency-Nom (fT) | 300 MHz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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