2SC3621
General Purpose Bipolar Transistor2SC3621
General Purpose Bipolar Transistor
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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2SC3621 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The 2SC3621 is a silicon NPN transistor designed for high-frequency amplifier applications. It has a maximum collector current of 100mA and a maximum collector power dissipation of 300mW. The transistor has a maximum voltage rating of 20V for both the collector-base and collector-emitter junctions.The 2SC3621 has a transition frequency (ft) of 2.5GHz, making it suitable for use in high-frequency circuits. It features a low noise figure of 1.3dB at 1GHz, making it ideal for low-noise amplification applications.The transistor is housed in a small surface-mount package, making it suitable for compact electronic devices that require high-frequency amplification. It has a low saturation voltage of 0.3V at a collector current of 10mA, which helps in reducing power consumption in amplification circuits.
Key Features
- High voltage, high-speed switching capability
- Low collector-emitter saturation voltage
- Complementary NPN type available (2SA1429)
- Low leakage current
- Low noise figure
- Suitable for use in audio amplifier circuits
- Wide operating temperature range
- Lead-free, RoHS compliant
Application
- RF power amplifiers
- Satellite communication systems
- Cellular base station transceivers
- Radar systems
- Phased array antennas
- Wireless infrastructure
- Industrial applications
- Microwave transmitters
- Medical equipment
- Broadcast transmitters
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | No | Part Life Cycle Code | Obsolete |
Reach Compliance Code | ECCN Code | EAR99 | |
HTS Code ! | 8541.29.00.75 | Collector Current-Max (IC) | 1.5 A |
Collector-Base Capacitance-Max | 20 pF | Collector-Emitter Voltage-Max | 150 V |
Configuration | SINGLE | DC Current Gain-Min (hFE) | 100 |
JESD-30 Code | R-PSFM-T3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | NPN | Power Dissipation Ambient-Max | 10 W |
Qualification Status ! | Not Qualified | Surface Mount ! | NO |
Terminal Form ! | THROUGH-HOLE | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON | Transition Frequency-Nom (fT) | 100 MHz |
VCEsat-Max | 1.5 V |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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