2SC4552
ROHS-Compliant 2SC4552: NPN Bipolar Transistor, TO-220F-3 Package, 60V, 30W, 15A2SC4552
ROHS-Compliant 2SC4552: NPN Bipolar Transistor, TO-220F-3 Package, 60V, 30W, 15A
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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2SC4552 DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
1 | $0.600 | $0.60 |
10 | $0.530 | $5.30 |
50 | $0.496 | $24.80 |
100 | $0.462 | $46.20 |
500 | $0.442 | $221.00 |
1000 | $0.431 | $431.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHINGThe 2SC4552 is a power transistor developed for high-speed switching and features low VCE(sat)and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost.FEATURES• High hFEand low VCE(sat): hFE ≥100 (VCE= 2 V, IC= 3 A) VCE(sat) ≤0.3 V (IC= 8 A, IB= 0.4 A)• Mold package that does not require an insulating board or insulation bushing
![](/files/uploads/product/b/a4b65c6c1f984b97b2a4b871cf80b6b2.webp)
Key Features
- FEATURES
- High hFEand low VCE(sat):
- hFE ≥100 (VCE= 2 V, IC= 3 A)
- VCE(sat) ≤0.3 V (IC= 8 A, IB= 0.4 A)
- Mold package that does not require an insulating board or insulation bushing
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Part Life Cycle Code | Active | Reach Compliance Code | |
ECCN Code | EAR99 | Date Of Intro | 2018-11-28 |
Case Connection | ISOLATED | Collector Current-Max (IC) | 15 A |
Collector-Base Capacitance-Max | 180 pF | Collector-Emitter Voltage-Max | 60 V |
Configuration | SINGLE | DC Current Gain-Min (hFE) | 60 |
Fall Time-Max (tf) | 300 ns | JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PSFM-T3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Polarity/Channel Type | NPN |
Power Dissipation Ambient-Max | 2 W | Power Dissipation-Max (Abs) | 30 W |
Surface Mount ! | NO | Terminal Form ! | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Transition Frequency-Nom (fT) | 120 MHz |
Turn-off Time-Max (toff) | 1800 ns | Turn-on Time-Max (ton) | 300 ns |
VCEsat-Max | 0.5 V |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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