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2SC5810(TE12L,F)
2SC5810(TE12L,F) from Toshiba: NPN Bipolar Transistor Rated for 1A Current and 50V Voltage in SC-62 Package
2SC5810(TE12L,F)
2SC5810(TE12L,F) from Toshiba: NPN Bipolar Transistor Rated for 1A Current and 50V Voltage in SC-62 Package
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2SC5810(TE12L,F) DataSheet
Pricing (USD)
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 5 | $0.116 | $0.58 |
| 50 | $0.099 | $4.95 |
| 150 | $0.092 | $13.80 |
| 1000 | $0.086 | $86.00 |
| 2000 | $0.081 | $162.00 |
| 5000 | $0.078 | $390.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
The 2SC5810(TE12L,F) is a high voltage NPN transistor designed for use in high-speed switching applications. It has a maximum collector-base voltage of 700V and a collector current of 100mA. The transistor is housed in a TO-126 package, which is a popular choice for medium power applications. This transistor is characterized by its high voltage capability, allowing it to be used in a variety of high voltage circuits. It has a low collector-emitter saturation voltage, which helps reduce power dissipation and improve efficiency in switching applications. The 2SC5810(TE12L,F) has a transition frequency of 100MHz, making it suitable for high-speed switching applications. It also has a low input capacitance, which helps reduce switching times and improve overall performance. This transistor is RoHS compliant, meaning it complies with environmental regulations regarding the use of hazardous substances in electronic products. It is suitable for use in a wide range of applications, including power supplies, inverters, and motor control systems.
Key Features
- NPN Epitaxial Planar Silicon Transistor
- High voltage and high-speed switching applications
- High DC current gain
- Low collector-to-emitter saturation voltage
- Complementary to 2SA2280(TE12L,F)
- RoHS compliant
- Available in a TO-220F package
Application
- Power amplifiers
- Switching circuits
- Motor control applications
- DC-DC converters
- Voltage regulators
- Audio amplifiers
- Lighting control systems
- Industrial automation
- Consumer electronics
- Telecommunication equipment
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | Bipolar Transistors - BJT | RoHS | Details |
| Mounting Style | SMD/SMT | Package / Case | SC-62-3 |
| Transistor Polarity | NPN | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 50 V | Collector- Base Voltage VCBO | 100 V |
| Emitter- Base Voltage VEBO | 7 V | Collector-Emitter Saturation Voltage | 170 mV |
| Maximum DC Collector Current | 1 A | Maximum Operating Temperature ! | + 150 C |
| Series | 2SC5810 | Brand | Toshiba |
| Product Type ! | BJTs - Bipolar Transistors | Factory Pack Quantity | 1000 |
| Subcategory | Transistors | Technology | Si |
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