2SD880L

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The 2SD880L is a silicon NPN power transistor for general-purpose switching and amplification applications.

  • Manufacturer Part # : 2SD880L

  • Package/Case: TO-220

  • Brand: UTC

  • Product Categories : Power Bipolar Transistors

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Shipping & Payment

Shipping & Payment

About Shipping

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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2SD880L DataSheet

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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Rapid Quote

Please submit RFQ for 2SD880L or email to us: Email: [email protected], we will contact you in 12 hours.

Details

The 2SD880L is a PNP bipolar junction transistor (BJT) designed for use in power amplifier and high-speed switching applications. It has a maximum collector-emitter voltage (Vce) of -60V and a maximum collector current (Ic) of -3A. The device features a low saturation voltage and high current gain, making it suitable for use in high-efficiency power amplifier circuits.The 2SD880L is housed in a TO-126 package, which offers good thermal performance for improved reliability. The transistor is designed to operate over a wide temperature range of -55°C to 150°C, making it suitable for use in a variety of environmental conditions.In terms of electrical characteristics, the 2SD880L has a typical DC current gain (hfe) of 40 at a collector current of -1A and a Vce of -5V. The transistor has a maximum base-emitter voltage (Vbe) of -5V and a low total capacitance, allowing for high-speed switching operation.

Key Features

  • Low collector-emitter saturation voltage
  • High current gain
  • Low leakage current
  • Low noise
  • Complementary to 2SB837L
  • Designed for use in audio frequency amplifier applications

Application

  • Power management in portable electronic devices
  • Audio amplification in TVs and stereos
  • Motor control in household appliances
  • Lighting control in smart home systems
  • Battery charging circuits in smartphones
  • Sensor interface circuits in industrial automation
  • Switching circuits in power supplies
  • Voltage regulation in automotive applications

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification 2SD880L PDF Download

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