2SJ148
2SJ148 is classified under the SC-43 IEC package designation and has a 2-5F1H part number2SJ148
2SJ148 is classified under the SC-43 IEC package designation and has a 2-5F1H part number
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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2SJ148 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The 2SJ148 is a P-channel junction field-effect transistor (JFET) with a maximum drain-source voltage of -60 volts and a maximum gate-source voltage of ±20 volts. It has a continuous drain current of -10 milliamps and a power dissipation of 0.23 watts. The 2SJ148 has a low input capacitance of 30 picofarads and a high cutoff frequency of 200 megahertz, making it suitable for high-frequency applications.This JFET is housed in a TO-92 package and has three terminals: drain, source, and gate. The drain and source terminals are made of a silicon P/N junction, while the gate terminal is made of a metal layer. The 2SJ148 is designed for use in low-noise amplifiers, high-frequency circuits, and voltage-controlled resistors.When operating the 2SJ148, it is important to take note of the recommended operating conditions, such as the maximum junction temperature of 150 degrees Celsius and the storage temperature range of -55 to 150 degrees Celsius. Additionally, the 2SJ148 should be handled carefully to prevent damage to the device during installation and operation.
Key Features
- Low on-resistance
- High input impedance
- Small package size
- Low leakage current
- High breakdown voltage
- Low gate charge
- Enhancement mode
- Fast switching speed
- Suitable for high frequency applications
- High reliability and performance
Application
- Audio amplifier circuits
- Preamplifiers
- High-speed switching circuits
- Power supply regulators
- Motor control circuits
- Signal processing circuits
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | No | Rohs Code | No |
Part Life Cycle Code | Obsolete | Part Package Code | TO-92 |
Pin Count ! | 3 | Reach Compliance Code | |
ECCN Code | EAR99 | Configuration | SINGLE |
DS Breakdown Voltage-Min | 60 V | Drain Current-Max (Abs) (ID) | 0.2 A |
Drain Current-Max (ID) | 0.2 A | Drain-source On Resistance-Max | 2 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 22 pF |
JEDEC-95 Code | TO-92 | JESD-30 Code | O-PBCY-T3 |
JESD-609 Code | e0 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode ! | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | ROUND | Package Style | CYLINDRICAL |
Polarity/Channel Type | P-CHANNEL | Power Dissipation-Max (Abs) | 0.4 W |
Qualification Status ! | Not Qualified | Surface Mount ! | NO |
Terminal Finish | TIN LEAD | Terminal Form ! | THROUGH-HOLE |
Terminal Position | BOTTOM | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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