2SK2782
N-channel Silicon Transistor MOSFET with 60V voltage rating and 20A current rating2SK2782
N-channel Silicon Transistor MOSFET with 60V voltage rating and 20A current rating
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Service & Packaging
Service & Packaging
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2SK2782 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The 2SK2782 is a N-channel Power MOSFET designed for high-speed switching applications in power supply circuits and DC-DC converters. This MOSFET has a drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 7A, making it suitable for medium-power applications. The on-resistance (RDS(on)) of the 2SK2782 is typically 1.2 ohms, which allows for efficient operation with low power losses.This MOSFET has a gate threshold voltage (VGS(th)) of 3.0V, making it easy to drive with standard logic level signals. The input capacitance (Ciss) of the 2SK2782 is 750pF, which enables fast switching speeds and high efficiency in high-frequency applications.The 2SK2782 is housed in a TO-220 package, which provides good thermal performance and easy mounting on heat sinks for effective heat dissipation. It has a maximum junction temperature (TJ) of 150°C, ensuring reliable operation under high-temperature conditions.
Key Features
- High power dissipation (100 W)
- High breakdown voltage (800 V)
- Low on-resistance (0.3 ohm)
- Low input capacitance (320 pF)
- High switching speed
- Low leakage current
Application
- Switching circuits
- Amplifiers
- Oscillators
- Pulse circuits
- DC-DC converters
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | No | Part Life Cycle Code | Active |
Reach Compliance Code |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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