AOD3N50

Transistor MOSFET N-Channel 500V 2.8A DPAK Package
5,722 Effective Inventory

AOD3N50

Effective Inventory5,722

Transistor MOSFET N-Channel 500V 2.8A DPAK Package

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Service & Packaging

Service & Packaging

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AOD3N50 DataSheet
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Details

The AOD3N50 is an impressive N-channel MOSFET designed for high-speed switching applications. With a 500V drain-source voltage rating and a continuous drain current of 3A, this MOSFET is a powerhouse. Its low on-resistance of 3 ohms helps to minimize power losses and enhance efficiency in switching applications. The AOD3N50 features a high input impedance and low input capacitance, making it suitable for applications requiring fast switching speeds. Housed in a TO-252 package, it offers excellent thermal performance and easy PCB mounting. Additionally, the AOD3N50 is engineered to withstand high levels of electrical and thermal stress, making it suitable for use in demanding industrial and automotive applications. With built-in protection features such as overcurrent and overtemperature protection, the AOD3N50 ensures reliable and safe operation in a variety of environments

AOD3N50

Key Features

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Limited capacitance
  • Low gate charge
  • Low reverse recovery time
  • Over-current protection
  • Temperature and over-voltage protection
  • TO-252 packaging
  • Designed for use in power supply systems

Application

  • LED lighting
  • Switch mode power supplies
  • Automotive systems
  • Industrial motor control
  • Solar inverters
  • Battery management systems
  • Smart grid systems
  • Electric vehicle charging systems
  • RF amplifiers
  • Switching regulators
Alpha & Omega Semiconductor Inc. Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

ECCN (US) EAR99 Part Status ! NRND
HTS 8541.29.00.95 SVHC Yes
SVHC Exceeds Threshold Yes Category Power MOSFET
Configuration Single Channel Mode Enhancement
Channel Type N Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 500 Maximum Gate Source Voltage (V) ±30
Maximum Continuous Drain Current (A) 2.8 Maximum Drain Source Resistance (mOhm) 3000@10V
Typical Gate Charge @ Vgs (nC) 6.7@10V Typical Gate Charge @ 10V (nC) 6.7
Typical Input Capacitance @ Vds (pF) 276@25V Maximum Power Dissipation (mW) 57000
Typical Fall Time (ns) 15 Typical Rise Time (ns) 19
Typical Turn-Off Delay Time (ns) 20.5 Typical Turn-On Delay Time (ns) 11
Minimum Operating Temperature (°C) -50 Maximum Operating Temperature (°C) 150
Typical Drain Source Resistance @ 25°C (mOhm) 2300@10V Mounting Surface Mount
Package Height 2.29 Package Width 6.1
Package Length 6.6 PCB changed 2
Tab Tab Standard Package Name TO-252
Supplier Package DPAK Pin Count ! 3

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification AOD3N50 PDF Download

FAQs

What is AOD3N50?

The AOD3N50 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Alpha & Omega Semiconductor. It is commonly used in power management and switching applications, such as power supplies, motor control, and LED lighting.

How Does AOD3N50 Work?

The AOD3N50 works by controlling the flow of current between the drain and source terminals based on the voltage applied to the gate terminal. As a power MOSFET, it can handle high voltage and high current, making it suitable for power switching and amplification applications.

How Many Pins does AOD3N50 have and What are the Functions of the Pinout Configuration?

The AOD3N50 is typically housed in a TO-252 package (also known as DPAK). The pinout configuration includes:

  • GATE: Gate terminal for controlling the MOSFET.
  • DRAIN: Drain terminal for the main current flow.
  • SOURCE: Source terminal connected to ground.

What are the Pros and Cons of AOD3N50?

Pros:

  • High Voltage Rating: Can handle high voltage levels, suitable for power applications.
  • Low On-Resistance: Provides low resistance when fully conducting, leading to low power dissipation.
  • Fast Switching Speed: Enables efficient power switching and control.
  • Compact Package: The TO-252 package offers a good balance of thermal performance and space efficiency.

Cons:

  • Drive Voltage: May require relatively high gate drive voltage for full conduction.
  • Heat Dissipation: High power dissipation may require additional thermal management.
  • Reverse Recovery: Requires consideration of inductive load and potential voltage spikes in some applications.

Are There Any Equivalents/Alternatives to AOD3N50 for Recommendation?

Similar N-channel MOSFET alternatives to the AOD3N50 include the IRF540 from Infineon Technologies and the FQP30N06L from Fairchild Semiconductor.

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