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AP70T03GH
N-Channel 60A Power MOSFET 30V 0.009 OhmAP70T03GH
N-Channel 60A Power MOSFET 30V 0.009 Ohm
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AP70T03GH DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The AP70T03GH is a power MOSFET transistor manufactured by Advanced Power Electronics Corp. It is designed for use in high current, high speed switching applications in power supplies, motor control, and other industrial applications. The AP70T03GH features a drain-source voltage rating of 30V and a continuous drain current of 70A, making it suitable for handling high power loads. It has a low on-resistance of 7.5mΩ, which helps reduce power losses and improve efficiency in high current applications. This MOSFET transistor is housed in a TO-252 package, which provides good thermal performance and allows for easy mounting on a circuit board. It also has a gate threshold voltage of 2.5V and a low gate charge of 32nC, enabling fast switching speeds and efficient operation.The AP70T03GH is designed to operate in a wide temperature range from -55°C to 175°C, making it suitable for use in harsh environments. It also has built-in protection features such as overcurrent and thermal shutdown to ensure reliable and safe operation.
Key Features
- Power MOSFET transistor
- 70A continuous drain current
- 30V drain-source voltage
- Low on-resistance of 5.5mOhm
- Fast switching speed
- High power density
- TO-252 package
- Suitable for various power applications
Application
- Power management systems
- Battery charging circuits
- Solar power systems
- DC-DC converters
- Switching applications
- LED backlighting control
- Motor control circuits
- Voltage regulation systems
- Automotive electronics
- Industrial control systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Part Life Cycle Code | Obsolete | Part Package Code | TO-252 |
| Pin Count ! | 4 | Reach Compliance Code | compliant |
| ECCN Code | EAR99 | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30 V | Drain Current-Max (ID) | 60 A |
| Drain-source On Resistance-Max | 0.009 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252 | JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 | Number of Terminals | 2 |
| Operating Mode ! | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 195 A | Qualification Status ! | Not Qualified |
| Surface Mount ! | YES | Terminal Form ! | GULL WING |
| Terminal Position | SINGLE | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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