APT30GT60BRG
APT30GT60BRG Insulated Gate Bipolar Transistor - NPT Standard SpeedAPT30GT60BRG
APT30GT60BRG Insulated Gate Bipolar Transistor - NPT Standard Speed
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Manufacturer Part # : APT30GT60BRG
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Package/Case: TO247-3
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Part Status : ACTIVE
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Brand: Microchip Technology
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Product Categories : Single IGBTs
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RoHS:
Quality Assurance
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Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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APT30GT60BRG DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The APT30GT60BRG is an Insulated Gate Bipolar Transistor (IGBT) belonging to the Non-Punch Through (NPT) series with a voltage rating of 600V and a current rating of 64A. It comes in a TO-247 package, which is a widely used package for high power electronic devices. This IGBT is designed for applications requiring high efficiency and fast switching speeds, making it suitable for use in power inverters, motor control, renewable energy systems, and industrial equipment. The NPT technology used in this component helps reduce conduction losses, improve ruggedness, and enhance device reliability. The APT30GT60BRG features a built-in freewheeling diode, which allows for efficient energy dissipation during switching operations and minimizes voltage spikes. It also has a low saturation voltage, which helps reduce power dissipation and improve overall system efficiency.
Key Features
- 650V, 50A IGBT module
- Low VCE(sat) for high efficiency
- Positive temperature coefficient for easy paralleling
- Ultra-fast, soft recovery diode
- High thermal conductivity ceramic substrate
- Isolation voltage: 2500V RMS
- Integrated gate resistor
- RoHS compliant
Application
- Motor drives
- Uninterruptible power supplies (UPS)
- Welding equipment
- Industrial inverters
- Solar inverters
- Switched-mode power supplies
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | TO-247-3 |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 2 V |
Maximum Gate Emitter Voltage | - 30 V, 30 V | Continuous Collector Current at 25 C | 64 A |
Pd - Power Dissipation | 250 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 150 C | Brand | Microchip Technology |
Continuous Collector Current | 64 A | Continuous Collector Current Ic Max | 64 A |
Gate-Emitter Leakage Current | 100 nA | Height | 5.31 mm |
Length | 21.46 mm | Operating Temperature Range ! | - 55 C to + 150 C |
Product Type ! | IGBT Transistors | Factory Pack Quantity | 1 |
Subcategory | IGBTs | Tradename | Thunderbolt IGBT |
Width | 16.26 mm | Unit Weight | 1.340411 oz |
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