APT40SM120B
High-voltage N-channel SiC MOSFET in TO-247 package with 41A current capabilityAPT40SM120B
High-voltage N-channel SiC MOSFET in TO-247 package with 41A current capability
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Manufacturer Part # : APT40SM120B
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Package/Case: TO247-3
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Part Status : OBSOLETE
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Brand: Microchip Technology
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Product Categories : Single FETs, MOSFETs
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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APT40SM120B DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The APT40SM120B is a high-powered Silicon Carbide Field Effect Transistor (SICFET) with an N-channel configuration. It is designed to handle high voltages of up to 1200V and high currents of up to 41A, making it ideal for use in applications that require high power capabilities. The TO247 package type of the APT40SM120B allows for easy mounting and thermal management, ensuring optimal performance under high stress conditions. The use of Silicon Carbide material in the construction of this transistor offers significant advantages over traditional silicon-based devices, including higher breakdown voltage, lower on-resistance, and better thermal conductivity. This electronic component is suitable for use in a wide range of applications including power supplies, motor controls, solar inverters, and electric vehicle charging systems. Its high voltage and current ratings make it well-suited for demanding industrial and automotive applications where reliability and efficiency are critical.
Key Features
- Model: APT40SM120B
- Current Rating: 40A
- Voltage Rating: 1200V
- Fast switching
- Low reverse recovery charge
- High power density
- Isolated baseplate for easy mounting
- Applications in motor control, inverters, and power supplies
Application
- Power supplies
- Industrial motor drives
- Welding equipment
- Uninterruptible power supplies (UPS)
- Renewable energy systems
- Electric vehicles
- Medical equipment
- Telecommunication equipment
- Home appliances
- Automotive systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | Details |
Technology | SiC | Mounting Style | Through Hole |
Package / Case | TO-247-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 1.2 kV |
Id - Continuous Drain Current | 41 A | Rds On - Drain-Source Resistance | 80 mOhms |
Vgs - Gate-Source Voltage | - 10 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 1.7 V |
Qg - Gate Charge | 130 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 175 C | Pd - Power Dissipation | 273 W |
Channel Mode | Enhancement | Series | APT40SM120 |
Brand | Microchip Technology | Configuration | Single |
Fall Time | 16 ns | Product Type ! | MOSFET |
Rise Time ! | 6 ns | Factory Pack Quantity | 1 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 32 ns | Typical Turn-On Delay Time | 10 ns |
Unit Weight | 0.211644 oz |
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