ATP114-TL-H

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The ATP114-TL-H is a high-performance P-channel power MOSFET capable of handling voltages up to -60V and currents up to -55A

  • Manufacturer Part # : ATP114-TL-H

  • Package/Case: PAK

  • Part Status : Obsolete

  • Brand: Onsemi

  • Product Categories : Single FETs, MOSFETs

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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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ATP114-TL-H DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
1 $1.516 $1.52
10 $1.303 $13.03
30 $1.185 $35.55
100 $1.053 $105.30
500 $0.994 $497.00
1000 $0.967 $967.00

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

Rapid Quote

Please submit RFQ for ATP114-TL-H or email to us: Email: [email protected], we will contact you in 12 hours.

Details

General-Purpose Switching Device ApplicationsFeatures• ON-resistance RDS(on)1=12mΩ(typ.)• 4V drive• Protection diode in• Input Capacitance Ciss=4000pF(typ.)• Halogen free compliance

Key Features

  • ON-resistance RDS(on)1=12mΩ(typ.)
  • 4V drive
  • Protection diode in
  • Input Capacitance Ciss=4000pF(typ.)
  • Halogen free compliance

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Part Life Cycle Code Obsolete
Pin Count ! 3 Reach Compliance Code not_compliant
ECCN Code EAR99 Avalanche Energy Rating (Eas) 100 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V Drain Current-Max (Abs) (ID) 55 A
Drain Current-Max (ID) 55 A Drain-source On Resistance-Max 0.016 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PSSO-G2
JESD-609 Code e6 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 2
Operating Mode ! ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL Power Dissipation-Max (Abs) 60 W
Pulsed Drain Current-Max (IDM) 165 A Surface Mount ! YES
Terminal Finish TIN BISMUTH Terminal Form ! GULL WING
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON Manufacturer onsemi
Product Category ! MOSFET Technology Si
Mounting Style SMD/SMT Package / Case ATPAK-3
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 55 A
Rds On - Drain-Source Resistance 24 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage - Qg - Gate Charge 92 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature ! + 150 C
Pd - Power Dissipation 60 W Channel Mode Enhancement
Series ATP114 Brand onsemi
Fall Time 300 ns Product Type ! MOSFET
Rise Time ! 200 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 450 ns Typical Turn-On Delay Time 19 ns
Unit Weight 0.139332 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification ATP114-TL-H PDF Download

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