BD239A
BD239A is an NPN silicon transistorBD239A
BD239A is an NPN silicon transistor
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Manufacturer Part # : BD239A
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Package/Case: TO-220
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Part Status : Obsolete
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Brand: BOURNS
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Product Categories : Single Bipolar Transistors
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
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BD239A DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The BD239A is a PNP epitaxial silicon power transistor that is designed for high voltage applications. It has a maximum collector-base voltage of -100V and a maximum collector-emitter voltage of -80V. The continuous collector current is rated at -1.0A, with a peak collector current of -4.0A. The transistor has a power dissipation of 15W and a low collector-emitter saturation voltage.The BD239A is housed in a TO-126 package, which is designed for medium power applications. It features a high current gain of 40 to 250 at a collector current of -0.5A, making it suitable for use in audio amplifiers, power supplies, and voltage regulators.The transistor has a low base-emitter saturation voltage of -0.7V, ensuring efficient operation in switching applications. It also has a high transition frequency of 5MHz, which allows for fast switching speeds.
Key Features
- Silicon transistor technology
- Low voltage operation
- Miniaturized design possible
- Compact size and weight
- Easy to integrate circuits
Application
- Power amplification in audio systems
- Motor control in industrial applications
- Switching and linear applications in electronic circuits
- Voltage regulation in power supplies
- Driving transformers and solenoids
- Amplification and signal processing in instrumentation
- Temperature control in heating systems
- Power switching in general purpose applications
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | No | Part Life Cycle Code | Obsolete |
Reach Compliance Code | ECCN Code | EAR99 | |
Collector Current-Max (IC) | 2 A | Configuration | Single |
DC Current Gain-Min (hFE) | 15 | JESD-609 Code | e0 |
Operating Temperature-Max | 150 °C | Polarity/Channel Type | NPN |
Power Dissipation-Max (Abs) | 30 W | Surface Mount ! | NO |
Terminal Finish | Tin/Lead (Sn/Pb) | Transition Frequency-Nom (fT) | 3 MHz |
Manufacturer | Bourns | Product Category ! | Bipolar Transistors - BJT |
RoHS | N | Mounting Style | Through Hole |
Package / Case | TO-220-3 | Transistor Polarity | NPN |
Collector- Emitter Voltage VCEO Max | 60 V | Emitter- Base Voltage VEBO | 5 V |
Maximum DC Collector Current | 2 A | Pd - Power Dissipation | 30 W |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature ! | + 150 C |
Brand | Bourns | DC Collector/Base Gain hfe Min | 40 |
Height | 8.72 mm | Length | 10.4 mm |
Product Type ! | BJTs - Bipolar Transistors | Factory Pack Quantity | 50 |
Subcategory | Transistors | Technology | Si |
Width | 4.7 mm | Unit Weight | 0.211644 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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