BGD814
40MHz - 870MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT-115J, 7 PINBGD814
40MHz - 870MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT-115J, 7 PIN
Quality Assurance
Quality Assurance
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Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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BGD814 DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
Hybrid amplifier module in a SOT115J package operating with a voltage supply of 24 V (DC).FEATURES• Excellent linearity• Extremely low noise• Excellent return loss properties• Silicon nitride passivation• Rugged construction• Gold metallization ensures excellent reliability.APPLICATIONS• CATV systems operating in the 40 to 870 MHz frequency range.
Key Features
- Excellent linearity
- Extremely low noise
- Excellent return loss properties
- Silicon nitride passivation
- Rugged construction
- Gold metallization ensures excellent reliability.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | Yes | Part Life Cycle Code | Obsolete |
Reach Compliance Code | Additional Feature ! | LOW NOISE, HIGH RELIABILITY | |
Characteristic Impedance | 75 Ω | Construction | MODULE |
Gain | 20.5 dB | Input Power-Max (CW) | 21.25 dBm |
Operating Frequency-Max | 870 MHz | Operating Frequency-Min | 40 MHz |
Operating Temperature-Max | 100 °C | Operating Temperature-Min | -20 °C |
Package Body Material | PLASTIC/EPOXY | Package Equivalence Code | SOT-115J |
Power Supplies ! | 24 V | RF/Microwave Device Type | WIDE BAND HIGH POWER |
Supply Current-Max | 410 mA | Technology | HYBRID |
Manufacturer | NXP | Product Category ! | RF Amplifier |
RoHS | Details | Mounting Style | SMD/SMT |
Package / Case | SOT-115 | Type | General Purpose Amplifiers |
Operating Frequency ! | 870 MHz | Operating Supply Voltage ! | 24 V |
Operating Supply Current | 410 mA | Brand | NXP Semiconductors |
Input Return Loss | 12 dB | Number of Channels | 1 Channel |
Product Type ! | RF Amplifier | Factory Pack Quantity | 100 |
Subcategory | Wireless & RF Integrated Circuits | Test Frequency ! | 870 MHz |
Part # Aliases | BGD814,112 | Unit Weight | 0.465616 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is BGD814?
The BGD814 is a high-power, high-frequency RF power transistor designed by NXP Semiconductors. It is suitable for use in applications such as radio frequency (RF) power amplifiers, industrial heating, and medical equipment that require high-power RF signals.
How Does BGD814 Work?
The BGD814 works by amplifying radio frequency signals with high power and efficiency. It is designed to handle high-frequency RF signals and is capable of delivering significant power output. The transistor is suitable for applications where high-power RF amplification is crucial, such as in industrial and medical RF systems.
How Many Pins does BGD814 have and What are the Functions of the Pinout Configuration?
The BGD814 is housed in a compact SOT539A surface-mount package. The pinout configuration includes:
- RF Input, DC Ground: Connection points for the input RF signal and the ground connection.
- RF Output, DC Supply: Connection points for the amplified RF output and the DC power supply.
What are the Pros and Cons of BGD814?
Pros:
- High Power: Capable of amplifying high-power RF signals.
- High Frequency Capability: Designed for high-frequency RF applications.
- Compact Package: Housed in a space-efficient surface-mount package.
Cons:
- Specialized Application: May not be suitable for low-power or lower frequency applications.
- Heat Dissipation: High-power RF transistors may require careful thermal management for optimal performance.
Are There Any Equivalents/Alternatives to BGD814 for Recommendation?
Alternative high-power RF transistors to the BGD814 include the BLF574 from Ampleon and the MRF454 from NXP Semiconductors.
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