BLF6G22-45
Silicon-based N-channel metal-oxide semiconductor FBLF6G22-45
Silicon-based N-channel metal-oxide semiconductor F
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
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About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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BLF6G22-45 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
BLF6G22-45 is a RF MOSFET, designed for high power amplification applications in the 2.11GHz to 2.17GHz frequency range. It has a maximum drain-source voltage of 28V and can handle a maximum drain current of 405mA, making it suitable for use in various RF power amplifier circuits. This MOSFET offers a gain of 18.5dB, which is impressive for its frequency range, enabling it to amplify signals effectively. With a power output of 2.5W, the BLF6G22-45 can provide sufficient power for various RF communication systems and applications. The component is housed in a compact CDFM2 package, which helps in maintaining signal integrity and thermal performance. Its small form factor makes it ideal for use in space-constrained designs where high power amplification is required.
Key Features
- Frequency: 470-860 MHz
- Output Power: 45W
- Gain: 22 dB
- Efficiency: 60%
- Supply Voltage: 28V
- Package: NI-780
- RoHS Compliant: Yes
Application
- Aviation: Used in radar systems and communication equipment
- Military: Employed in radar systems, electronic jamming equipment, and communication systems
- Satellite communication: Used in satellite transponders and ground stations
- Industrial applications: Employed in high power amplifiers for industrial heating and welding equipment
- Medical equipment: Used in RF amplifiers for medical imaging systems
- Telecommunications: Employed in base station amplifiers and repeaters for cellular networks
- Radio frequency testing and measurement: Used in RF test equipment for accurate measurements
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | NXP Semiconductors | Product Category ! | RF FETs |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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