BSC047N08NS3G
18A current capacityBSC047N08NS3G
18A current capacity
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Manufacturer Part # : BSC047N08NS3G
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Package/Case: SuperSO8
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Brand: Infineon
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Product Categories : Single FETs, MOSFETs
Quality Assurance
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Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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BSC047N08NS3G DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The BSC047N08NS3 G is a N-channel power MOSFET manufactured by Infineon Technologies. It is designed for use in a wide range of applications, including DC-DC converters, motor control, and power supplies. This MOSFET features a maximum continuous drain current of 47A and a maximum drain-source voltage of 80V. It has a low on-state resistance of 8mΩ, which helps to reduce power losses and improve efficiency in high-current applications. The BSC047N08NS3 G also has a gate threshold voltage of 2.5V and a gate charge of 58nC, making it easy to drive with standard digital logic circuits. It has a low input capacitance of 2850pF and a fast switching speed, which allows for efficient operation at high frequencies.This MOSFET is housed in a TO-263 package, which provides excellent thermal performance and reliable operation in demanding environments. It is also RoHS compliant, making it suitable for use in environmentally sensitive applications.
Key Features
- This is a powerful MOSFET transistor.
- Designed for high efficiency power switching
- Suitable for rugged and harsh environments
- Rugged Silicon Carbide structure ensures reliability
- This device features low on-resistance and gate charge
- Maximum drain-source voltage is 80V
Application
- Advanced power MOSFET technology
- Perfect for high current applications
- Robust automotive transistor
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
IDpuls max | 400.0 A | Ptot max | 125.0 W |
VDS max | 80.0 V | Polarity | N |
RDS (on) max | 4.7 mΩ | Package | SuperSO8 5x6 |
ID max | 100.0 A | VGS(th) max | 3.5 V |
VGS(th) min | 2.0 V | Operating Temperature max | 150.0 °C |
Operating Temperature min | -55.0 °C |
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