BSH114-215

Effective Inventory5,573

MOSFET TAPE7 PWR-MO

  • Manufacturer Part # : BSH114-215

  • Package/Case: SOT

  • Brand: NXP

  • Product Categories : Small Signal Field-Effect Transistors

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Service & Packaging

Service & Packaging

About After Sales Service

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Initiate the application within 90 days from the shipment date.

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BSH114-215 DataSheet

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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Rapid Quote

Please submit RFQ for BSH114-215 or email to us: Email: [email protected], we will contact you in 12 hours.

Details

BSH114-215 is a N-channel JFET transistor designed for high-frequency applications. It is manufactured by Infineon Technologies, a leading semiconductor company. This JFET transistor offers high power gain and low noise, making it ideal for use in amplifier circuits, oscillators, and high-frequency switching applications. The BSH114-215 features a low gate-source cut-off voltage, which allows for precise control of the transistor's conductance. This makes it suitable for use in applications that require precise voltage regulation or switching. With a high breakdown voltage and low on-state resistance, this JFET transistor can handle high power levels while maintaining efficiency. In terms of package type, the BSH114-215 is available in a surface-mount SOT-23 package, which is compact and ideal for space-constrained applications. This package also offers good thermal performance, ensuring stable operation even under high temperature conditions.

Key Features

  • The BSH114,215 is a N-channel enhancement mode vertical D-MOS transistor
  • It features a drain-source voltage (VDS) of -60V, a continuous drain current (ID) of -2
  • 6A, and a low threshold voltage (VGS(th)) ranging from -0
  • 45V to -1
  • 15V
  • It is designed for low voltage applications in consumer electronics, telecommunications, and portable devices
  • Application

  • The BSH114,215 is a N-channel enhancement-mode field-effect transistor (FET) commonly used in low-voltage applications such as voltage switches, low-noise amplifiers, and signal processing circuits
  • Its small size and low threshold voltage make it suitable for portable electronics and other power-sensitive devices where efficient energy use is crucial
  • Datasheet PDF

    Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

    Preliminary Specification BSH114-215 PDF Download

    FAQs

    What is BSH114-215?

    The BSH114-215 is a dual P-channel enhancement mode field-effect transistor (FET) designed by Infineon Technologies. It is commonly used for power management applications, such as battery charging, load switching, and portable devices.

    How Does BSH114-215 Work?

    The BSH114-215 works by controlling the flow of current between the source and drain terminals using the gate voltage. As a P-channel FET, it operates by creating a conductive channel between the source and drain terminals when a negative gate-source voltage is applied, allowing current to flow in the reverse direction compared to N-channel FETs.

    How Many Pins does BSH114-215 have and What are the Functions of the Pinout Configuration?

    The BSH114-215 is housed in a SOT23 package with three pins. The pinout configuration includes:

    • S: Source terminal.
    • G: Gate terminal.
    • D: Drain terminal.

    What are the Pros and Cons of BSH114-215?

    Pros:

    • Low Voltage Operation: Suitable for low-voltage applications.
    • Enhancement Mode: Can be easily controlled by applying a negative gate-source voltage.
    • Compact Package: The SOT23 package is space-efficient, suitable for compact designs.
    • Power Management: Ideal for power switching and battery-powered devices.

    Cons:

    • Higher On-Resistance: P-channel FETs generally have higher on-resistance compared to N-channel FETs.
    • Less Common: P-channel FETs are less common in some applications compared to N-channel FETs.

    Are There Any Equivalents/Alternatives to BSH114-215 for Recommendation?

    Alternatives to the BSH114-215 include the SI2305DDS-T1-GE3 from Vishay and the PHB140NQ03LT from NXP Semiconductors.

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