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BSM120D12P2C005
Power Field-Effect Transistor with 120A current rating, 1200V voltage rating, N-Channel design, and Silicon Carbide material composition
BSM120D12P2C005
Power Field-Effect Transistor with 120A current rating, 1200V voltage rating, N-Channel design, and Silicon Carbide material composition
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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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BSM120D12P2C005 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
Industrial operations require robust and reliable components, and the BSM120D12P2C005 IGBT module is specifically engineered to meet these demands. With a voltage rating of 1200V and a current rating of 105A, this module is capable of handling high-power switching applications with ease. Its compact and lightweight design aids in its seamless integration into existing systems, while its low inductance module construction minimizes switching losses and improves overall efficiency. Equipped with a built-in temperature sensor and overcurrent protection, the BSM120D12P2C005 ensures safe and reliable operation. Furthermore, its low thermal resistance enables efficient heat dissipation, further enhancing its performance in industrial settings
Application
- Automotive industry
- Industrial control systems
- Telecommunications equipment
- Power supply systems
- Medical equipment
- Renewable energy systems
- Test and measurement applications
- Railway signaling systems
- Military and aerospace applications
- Robotics and automation systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| Factory Lead Time | 17 Weeks | Case Connection | ISOLATED |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 1200 V |
| Drain Current-Max (Abs) (ID) | 120 A | Drain Current-Max (ID) | 120 A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-XUFM-X8 |
| Number of Elements | 2 | Number of Terminals | 8 |
| Operating Mode ! | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
| Package Body Material | UNSPECIFIED | Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 780 W |
| Pulsed Drain Current-Max (IDM) | 240 A | Surface Mount ! | NO |
| Terminal Form ! | UNSPECIFIED | Terminal Position | UPPER |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON CARBIDE |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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