BSS123W
N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 0.17A, 6Ω, 3000-REELBSS123W
N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 0.17A, 6Ω, 3000-REEL
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.
About Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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BSS123W DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
20 | $0.022 | $0.44 |
200 | $0.018 | $3.60 |
600 | $0.016 | $9.60 |
3000 | $0.013 | $39.00 |
9000 | $0.012 | $108.00 |
21000 | $0.011 | $231.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.Features• Low Gate Threshold Voltage• Low Input Capacitance• Fast Switching Speed• Low Input/Output Leakage• High Drain-Source Voltage Rating• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)• Halogen and Antimony Free. “Green” Device (Note 3)• Qualified to AEC-Q101 Standards for High ReliabilityApplications• Small Servo Motor Control• Power MOSFET Gate Drivers• Switching Applications
Key Features
- High-Speed, Low-Power Operation
- Fast Switching Time & RDS(ON)
- Efficient Thermal Dissipation
- Precision Temperature Compensation
- Rapid Charge/Discharge Capability
- Ultra-Low Saturation Current
Application
- Digital Temperature Sensors
- Audio Amplifier Circuits
- Low Noise Signal Processing
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Part Life Cycle Code | End Of Life |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
HTS Code ! | 8541.21.00.95 | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 100 V | Drain Current-Max (ID) | 0.17 A |
Drain-source On Resistance-Max | 6 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 2.74 pF | JESD-30 Code | R-PDSO-G3 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode ! | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation Ambient-Max | 0.2 W | Power Dissipation-Max (Abs) | 0.2 W |
Surface Mount ! | YES | Terminal Finish | MATTE TIN |
Terminal Form ! | GULL WING | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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