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BUK9832-55A
Si Power MOSFETBUK9832-55A
Si Power MOSFET
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All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
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Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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BUK9832-55A DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The BUK9832-55A is a N-channel Power MOSFET designed for use in high-current applications. It is part of the Nexperia Automotive grade product line, making it suitable for use in automotive systems where ruggedness, reliability, and high performance are required.This MOSFET has a maximum voltage rating of 55V and a continuous drain current rating of 100A, making it well-suited for use in applications requiring high power dissipation. The BUK9832-55A features a low on-resistance of 4.6mΩ, ensuring that power losses are kept to a minimum during operation.This device utilizes advanced packaging technology to improve thermal performance and ensure long-term reliability. It is also designed to be compatible with standard surface mount techniques, allowing for ease of assembly in manufacturing processes.In terms of protection features, the BUK9832-55A includes built-in zener diodes for ESD protection and overvoltage protection circuitry to safeguard against voltage transients. These features make the MOSFET well-suited for use in harsh environments where robust protection is necessary.
Key Features
- High voltage capacity (630V)
- Low on-resistance (1.1 Ohm)
- Fast switching speed
- Low gate charge
- Low leakage current
- Temperature and avalanche rated
Application
- Lighting systems
- Power supplies
- Motor controls
- Inverter drives
- Switching power supplies
- Industrial controls
- DC-DC converters
- Automotive electronics
- Telecommunications equipment
- Consumer electronic devices
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Pbfree Code | Yes | Rohs Code | Yes |
| Part Life Cycle Code | Transferred | Part Package Code | SC-73 |
| Pin Count ! | 4 | Reach Compliance Code | compliant |
| ECCN Code | EAR99 | Additional Feature ! | LOGIC LEVEL COMPATIBLE |
| Avalanche Energy Rating (Eas) | 100 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 50 V |
| Drain Current-Max (Abs) (ID) | 12 A | Drain Current-Max (ID) | 12 A |
| Drain-source On Resistance-Max | 0.036 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G4 | JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 4 | Operating Mode ! | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 8 W | Pulsed Drain Current-Max (IDM) | 47 A |
| Qualification Status ! | Not Qualified | Surface Mount ! | YES |
| Terminal Finish | Tin (Sn) | Terminal Form ! | GULL WING |
| Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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