BUZ100S

The BUZ100S device is an N-channel silicon power MOSFET designed for high-power applications
7,881 Effective Inventory

BUZ100S

Effective Inventory7,881

The BUZ100S device is an N-channel silicon power MOSFET designed for high-power applications

Quality Assurance

Quality Assurance

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Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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BUZ100S DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
1 $0.566 $0.57
200 $0.220 $44.00
500 $0.212 $106.00
1000 $0.207 $207.00

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

Rapid Quote

Please submit RFQ for BUZ100S or email to us: Email: [email protected], we will contact you in 12 hours.

Details

Features •N channel •Enhancement mode •Avalanche rated •dv/dt rated • 175˚C operating temperature

Key Features

  • N channel
  • Enhancement mode
  • Avalanche rated
  • dv/dt rated
  • 175˚C operating temperature

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series SIPMOS® Package Bulk
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 77A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 55A, 10V Vgs(th) (Max) @ Id 4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2375 pF @ 25 V Power Dissipation (Max) 170W (Tc)
Operating Temperature ! -55°C ~ 175°C (TJ) Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification BUZ100S PDF Download

FAQs

What is BUZ100S?

The BUZ100S is an N-channel enhancement mode power MOSFET designed for high-speed, high-voltage applications. It is commonly used in power supplies, motor control, and switching circuits to efficiently control high-power loads.

How Does BUZ100S Work?

The BUZ100S works by utilizing the voltage applied to the gate terminal to control the flow of current between the source and drain terminals. When a positive voltage is applied to the gate, it creates an electric field that allows current to flow through the MOSFET, enabling efficient switching of high-power loads.

How Many Pins does BUZ100S have and What are the Functions of the Pinout Configuration?

The BUZ100S is housed in a TO-220 package. The pinout configuration includes:

  • G (Gate): Control terminal for the MOSFET.
  • D (Drain): Terminal for the output or load connection.
  • S (Source): Terminal for the input or ground connection.

What are the Pros and Cons of BUZ100S?

Pros:

  • High Voltage Rating: Suitable for high-voltage applications.
  • Efficient Switching: Facilitates fast and efficient switching of high-power loads.
  • Robustness: Designed to handle high currents and power levels.

Cons:

  • Drive Voltage: May require a relatively high gate voltage for optimal performance.
  • Heat Dissipation: High power dissipation may require additional thermal management in some applications.

Are There Any Equivalents/Alternatives to BUZ100S for Recommendation?

Alternatives to the BUZ100S include the IRF540N from Infineon Technologies and the FQP30N06L from Fairchild Semiconductor.

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