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C3M0040120J1
1.2kV MOSFET with 64A current rating and 272W power dissipation at 53.5mΩ resistance
C3M0040120J1
1.2kV MOSFET with 64A current rating and 272W power dissipation at 53.5mΩ resistance
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Manufacturer Part # : C3M0040120J1
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Package/Case: TO-263-8,D2PAK(7Leads+Tab),TO-263CA
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Part Status : ACTIVE
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Brand: Wolfspeed, Inc.
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Product Categories : Single FETs, MOSFETs
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RoHS:
Quality Assurance
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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Tube or Tray
C3M0040120J1 DataSheet
Pricing (USD)
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | $15.298 | $15.30 |
| 10 | $14.714 | $147.14 |
| 50 | $13.702 | $685.10 |
| 100 | $12.818 | $1,281.80 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
The C3M0040120J1 Power Field-Effect Transistor is a robust and reliable semiconductor device designed for demanding power applications. With a current rating of 64A and a voltage rating of 1200V, this N-Channel Silicon Carbide FET delivers exceptional performance and efficiency. The low on-state resistance of 0.0535ohm minimizes power losses and enhances system reliability. Equipped with Metal-oxide Semiconductor technology, this transistor offers improved switching characteristics and thermal stability. The TO-263 package with 7 pins ensures easy installation and secure connections in industrial and automotive applications
Key Features
- Part number: C3M0040120J1
- SiC MOSFETs
- 1200V voltage rating
- 4A continuous current rating
- 12mΩ on-resistance
- High thermal conductivity
- Low input capacitance
- Excellent switching performance
- RoHS compliant
Application
- Industrial motor drives
- Switch-mode power supplies
- Electric vehicles
- Solar inverters
- Power factor correction modules
- Induction heating
- Resonant converters
- Uninterruptible power supplies
- Welding equipment
- High-voltage DC/DC converters
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Series | C3M™ | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) | Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Rds On (Max) @ Id, Vgs | 53.5mOhm @ 33.3A, 15V | Vgs(th) (Max) @ Id | 3.6V @ 9.2mA |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 15 V | Vgs (Max) | +15V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 1000 V | Power Dissipation (Max) | 272W (Tc) |
| Operating Temperature ! | -40°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Supplier Device Package | TO-263-7 | Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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