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C3M0075120K
MOSFET made of Silicon Carbide with a voltage rating of 1200V and a resistance of 75 milliohms
C3M0075120K
MOSFET made of Silicon Carbide with a voltage rating of 1200V and a resistance of 75 milliohms
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Manufacturer Part # : C3M0075120K
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Package/Case: TO247-4
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Brand: Wolfspeed, Inc
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Product Categories : Single FETs, MOSFETs
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Service & Packaging
Service & Packaging
About After Sales Service
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Initiate the application within 90 days from the shipment date.
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C3M0075120K DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The C3M0075120K is a high-voltage N-channel MOSFET designed for power applications. It has a maximum voltage rating of 1200V and a continuous drain current of 30A at a case temperature of 25°C. The maximum power dissipation at a case temperature of 25°C is 113.6W. This MOSFET is housed in a TO-247-4L package, which is a through-hole package that provides excellent thermal performance, making it suitable for high-power applications where heat dissipation is critical. The TO-247-4L package also allows for easy mounting on a heatsink, further enhancing its thermal properties. The C3M0075120K features low on-state resistance and fast switching speeds, making it ideal for applications such as power supplies, motor control, and inverters where efficiency and reliability are essential. Additionally, the MOSFET's high voltage rating makes it suitable for use in high-voltage circuits.
Key Features
- Part number: C3M0075120K
- Silicon Carbide Power MOSFET
- 1200V drain-source voltage
- 25A continuous drain current
- 125°C junction temperature
- High-speed switching
- Low on-resistance
- Enhanced thermal performance
Application
- EV charging
- Solar inverters
- Server power supplies
- Industrial power supplies
- Motor drives
- UPS systems
- Welding equipment
- RF power amplifiers
- Electric vehicles
- Telecom base stations
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | MOSFET | RoHS | Details |
| REACH | Details | Technology | SiC |
| Mounting Style | Through Hole | Package / Case | TO-247-4 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV | Id - Continuous Drain Current | 30 A |
| Rds On - Drain-Source Resistance | 75 mOhms | Vgs - Gate-Source Voltage | - 4 V, + 15 V |
| Vgs th - Gate-Source Threshold Voltage | 1.7 V | Qg - Gate Charge | 51 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 150 C |
| Pd - Power Dissipation | 119 W | Channel Mode | Enhancement |
| Brand | Wolfspeed | Configuration | Single |
| Fall Time | 11 ns | Forward Transconductance - Min | 8.3 S |
| Product Type ! | MOSFET | Rise Time ! | 11 ns |
| Factory Pack Quantity | 30 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 33 ns |
| Typical Turn-On Delay Time | 22 ns | Unit Weight | 0.211644 oz |
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