CMF10120D
CMF10120D is a N-channel Silicon Carbide MOSFET capable of operating at 1.2KV with a current rating of 24A in a TO-247 packageCMF10120D
CMF10120D is a N-channel Silicon Carbide MOSFET capable of operating at 1.2KV with a current rating of 24A in a TO-247 package
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Manufacturer Part # : CMF10120D
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Package/Case: TO247-3
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Part Status : OBSOLETE
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Brand: Wolfspeed, Inc
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Product Categories : Single FETs, MOSFETs
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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CMF10120D DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
CMF10120D is a silicon carbide power metal-oxide-semiconductor field-effect transistor (SICFET) designed for high-voltage and high-current applications. With a maximum voltage rating of 1200V and a maximum current rating of 24A, CMF10120D is capable of handling demanding power requirements in various electronic circuits. The TO-247 package configuration provides efficient heat dissipation, allowing CMF10120D to operate reliably even in high-power applications. This component is commonly used in power supplies, motor drives, renewable energy systems, and industrial equipment where high efficiency and power density are essential. The silicon carbide material used in CMF10120D offers advantages over traditional silicon-based components, including higher thermal conductivity, lower switching losses, and higher temperature tolerance. These characteristics make CMF10120D well-suited for applications that require high power densities and high frequency switching.
Key Features
- CMF10120D is a high power compact PFC module
- It has a universal input ranging from 85 to 264 VAC
- Output power of 100 W
- Efficiency up to 90%
- Operating temperature range of -40 to 85°C
- Over current, over voltage, and over temperature protection
Application
- Power modules
- DC/DC converters
- Uninterruptible power supplies (UPS)
- Electric vehicles (EV)
- Hybrid electric vehicles (HEV)
- Solar inverters
- Wind power systems
- Battery management systems
- Industrial motor drives
- LED lighting
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | Details |
Technology | SiC | Mounting Style | Through Hole |
Package / Case | TO-247-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 1.2 kV |
Id - Continuous Drain Current | 24 A | Rds On - Drain-Source Resistance | 160 mOhms |
Vgs - Gate-Source Voltage | - 5 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Qg - Gate Charge | 47.1 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 135 C | Pd - Power Dissipation | 152 W |
Channel Mode | Enhancement | Brand | Wolfspeed |
Configuration | Single | Fall Time | 21 ns |
Forward Transconductance - Min | 3.7 S, 3.4 S | Product Type ! | MOSFET |
Rise Time ! | 34 ns | Factory Pack Quantity | 30 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 38 ns | Typical Turn-On Delay Time | 8.8 ns |
Unit Weight | 0.211644 oz |
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