CSD19532Q5B
Silicon Power FET with 17A Drain Current, 100V Voltage Rating, 0.0057 Ohm On-ResistanceCSD19532Q5B
Silicon Power FET with 17A Drain Current, 100V Voltage Rating, 0.0057 Ohm On-Resistance
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Manufacturer Part # : CSD19532Q5B
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Package/Case: WSON-8
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Brand: texas instruments
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Product Categories : Single FETs, MOSFETs
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RoHS:
Quality Assurance
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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CSD19532Q5B DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
1 | $1.378 | $1.38 |
10 | $1.163 | $11.63 |
30 | $1.044 | $31.32 |
100 | $0.851 | $85.10 |
500 | $0.792 | $396.00 |
1000 | $0.766 | $766.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
The CSD19532Q5B Mosfet from Texas Instruments is a high-performance N Channel transistor designed for applications requiring a continuous drain current of 100A. With a maximum drain source voltage of 100V, this Mosfet offers a low on-resistance of 0.004Ohm at a test voltage of 10V. Its threshold voltage of 2.6V ensures efficient operation, while being RoHS compliant makes it environmentally friendly
Key Features
AVALANCHE RATEDApplication
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | VSON-CLIP-8 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 100 V | Id - Continuous Drain Current | 140 A |
Rds On - Drain-Source Resistance | 4.9 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.2 V | Qg - Gate Charge | 48 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 150 C |
Pd - Power Dissipation | 195 W | Channel Mode | Enhancement |
Tradename | NexFET | Series | CSD19532Q5B |
Brand | Texas Instruments | Configuration | Single |
Fall Time | 6 ns | Forward Transconductance - Min | 84 S |
Height | 1 mm | Length | 6 mm |
Product Type ! | MOSFET | Rise Time ! | 6 ns |
Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 22 ns |
Typical Turn-On Delay Time | 7 ns | Width | 5 mm |
Unit Weight | 0.003714 oz |
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