CY7C1049D-10VXI
4Mbit Parallel Static Random Access MemoryCY7C1049D-10VXI
4Mbit Parallel Static Random Access Memory
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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CY7C1049D-10VXI DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The CY7C1049D-10VXI from Cypress Semiconductor is a top-of-the-line high-speed synchronous SRAM chip designed to meet the demands of today's data-intensive applications. With a generous 1MB capacity, this chip can handle a large volume of data with ease, making it perfect for applications that require fast and reliable data storage and retrieval. Its speedy 10ns access time ensures that data can be accessed quickly and efficiently, helping to boost overall system performance. Additionally, the chip operates at a voltage of 3.3V, making it compatible with a wide range of systems and devices
![CY7C1049D-10VXI CY7C1049D-10VXI](/files/uploads/product/b/d3f31fd9-92fa-4dd6-edb0-08dbbf1058dd.webp)
Key Features
- Industrial temperature range of -40°C to 85°C
- 5V voltage operation
- 1 Meg x 9 organization
Application
- High-performance computing
- Low voltage memory
- High-density solutions
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | SRAM | RoHS | Details |
Memory Size ! | 4 Mbit | Organization | 512 k x 8 |
Access Time | 10 ns | Maximum Clock Frequency | 100 MHz |
Interface Type | Parallel | Supply Voltage - Max | 5.5 V |
Supply Voltage - Min | 4.5 V | Supply Current - Max | 90 mA |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature ! | + 85 C |
Mounting Style | SMD/SMT | Package / Case | SOJ-36 |
Brand | Infineon Technologies | Memory Type ! | SDR |
Moisture Sensitive | Yes | Product Type ! | SRAM |
Series | CY7C1049D | Factory Pack Quantity | 190 |
Subcategory | Memory & Data Storage | Type | Asynchronous |
Unit Weight | 0.011640 oz |
Specification Comparison
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is CY7C1049D-10VXI?
The CY7C1049D-10VXI is a high-performance 5V 1-Mbit (128K x 8) static RAM (SRAM) designed by Cypress Semiconductor. It is ideal for applications requiring fast, non-volatile memory, such as industrial automation, networking, and telecommunications equipment.
How Does CY7C1049D-10VXI Work?
The CY7C1049D-10VXI operates as a non-volatile memory storage device that retains stored data without the need for refreshing. It offers fast access times and low power consumption, making it suitable for high-performance, battery-powered applications. The SRAM can be interfaced with a microcontroller or processor for storing and retrieving data.
How Many Pins does CY7C1049D-10VXI have and What are the Functions of the Pinout Configuration?
The CY7C1049D-10VXI is housed in a 32-pin Very Thin Small Outline Package (VT SOP). The pinout configuration includes:
- VCC: Power supply pin.
- GND: Ground pin.
- Address Inputs (A0-A16): Inputs for addressing memory locations.
- Data Inputs/Outputs (DQ0-DQ7): Bidirectional data pins.
- Chip Enable (CE1, CE2): Chip enable pins for selecting device operation.
- Output Enable (OE): Output enable pin for enabling data output.
- Write Enable (WE): Write enable pin for writing data to the memory.
- Byte Enable (BYTE): Byte enable pin for selecting byte or word operations.
- Output Pins (Q/Q, Q/Q): Power-up/power-down output state pins.
What are the Pros and Cons of CY7C1049D-10VXI?
Pros:
- High Performance: Offers fast access times and operates at 5V, suitable for high-speed applications.
- Non-Volatile: Retains data without the need for refreshing, providing reliable memory storage.
- Low Power Consumption: Consumes low power, making it suitable for battery-powered devices.
- Large Capacity: Provides 1 Megabit (128K x 8) of storage capacity for data-intensive applications.
- Industrial Temperature Range: Operates reliably over an extended industrial temperature range.
Cons:
- Package Size: The VT SOP package may be relatively larger compared to other compact packages.
- Compatibility: Requires a 5V power supply, which may not be suitable for all low-power applications.
- Complex Interface: May require careful handling of address and control signals for proper operation.
Are There Any Equivalents/Alternatives to CY7C1049D-10VXI for Recommendation?
- The CY7C1049BV33-10ZI from Cypress Semiconductor is a similar 1-Mbit SRAM with a lower voltage operation.
- Alternatives to the CY7C1049D-10VXI include the AS6C1008-55SIN from Alliance Memory and the 628128LP from ISSI (Integrated Silicon Solution, Inc.).
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